公开(公告)号：US10084093B1

公开(公告)日：2018-09-25

申请号：US15600872

申请日：2017-05-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Shiv Kumar Mishra ,  Sunil Kumar Singh ,  Shesh Mani Pandey

IPC: H01L21/00 ,  H01L29/78 ,  H01L23/532 ,  H01L29/66 ,  H01L29/49

Abstract: During formation of a trench silicide contact, a sacrificial layer is incorporated into the trench directly over source/drain junctions prior to metallization of the trench. Selective removal of the sacrificial layer widens the trench proximate to the source/drain junctions, increasing the contact area and correspondingly decreasing the contact resistance between the source/drain junctions and a silicide layer.