公开(公告)号：US20140246696A1

公开(公告)日：2014-09-04

申请号：US13783547

申请日：2013-03-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Stefan Flachowsky ,  Roman Boschke ,  Ralf Illgen

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834

Abstract: When forming sophisticated semiconductor devices including N-channel transistors with strain-inducing embedded source and drain semiconductor regions, N-channel transistor performance may be enhanced by selectively growing embedded pure silicon source and drain regions in cavities exposing the silicon/germanium layer of a Si/SiGe-substrate, wherein the silicon layer of the Si/SiGe-substrate may exhibit a strong bi-axial tensile strain. The bi-axial tensile strain may improve both electron and hole mobility.

Abstract translation: 当形成包括具有应变诱导嵌入式源极和漏极半导体区域的N沟道晶体管的复杂半导体器件时，可以通过选择性地生长暴露硅/锗层中的嵌入式纯硅源极和漏极区域来增强N沟道晶体管性能 / SiGe衬底，其中Si / SiGe衬底的硅层可能表现出强的双轴向拉伸应变。 双轴拉伸应变可以改善电子和空穴迁移率。