Process for fabricating a device with a cavity formed at one end thereof
    11.
    发明授权
    Process for fabricating a device with a cavity formed at one end thereof 失效
    用于制造在其一端形成的腔的装置的方法

    公开(公告)号:US6028009A

    公开(公告)日:2000-02-22

    申请号:US61439

    申请日:1998-04-16

    摘要: A process is disclosed for fabricating a device with a cavity formed at one end thereof. A body is provided with a depression, and mask layer is applied to the surface of the body and the depression, the mask layer having a lower etch rate than the body. Near the depression, an opening is formed in the mask layer. Starting from the opening, the body is subjected to an isotropic etching process to form the cavity below the mask layer, with the mask layer being essentially preserved and forming in the area of the depression a structure extending into the cavity.

    摘要翻译: 公开了一种用于制造在其一端形成有空腔的装置的方法。 身体设置有凹陷,并且掩模层被施加到身体的表面和凹陷,掩模层具有比身体更低的蚀刻速率。 在凹陷附近,在掩模层中形成开口。 从开口开始,对主体进行各向同性蚀刻处理以在掩模层下方形成空腔,掩模层基本上被保留,并且在凹陷区域中形成延伸到空腔中的结构。