公开(公告)号：US5888882A

公开(公告)日：1999-03-30

申请号：US832766

申请日：1997-04-04

申请人： Guenter Igel ,  Martin Mall

发明人： Guenter Igel ,  Martin Mall

IPC分类号： H01L21/301 ,  H01L21/304 ,  H01L21/66 ,  H01L21/68 ,  H01L21/84

CPC分类号： H01L21/6835 ,  H01L21/3043 ,  H01L22/20 ,  Y10S438/948

摘要： A process for separating electronic devices connected with one another in a body, the process including thinning the side of the body remote from the electronic devices, separating the electronic devices, and testing electrical parameters of the electronic devices after the thinning of the body. The handling of the body is improved by applying to the side of the body containing the electronic devices, prior to the thinning process, an electrically nonconductive auxiliary layer in which respective contact openings are formed above the electronic devices to expose the contact(s) of the respective electronic device.

摘要翻译： 一种用于分离在体内彼此连接的电子装置的方法，所述方法包括使远离电子装置的身体的侧面变薄，分离电子装置，以及在身体变薄之后测试电子装置的电气参数。 在薄化处理之前，通过在包含电子器件的主体的一侧施加电导体辅助层来改善身体的处理，其中在电子设备上方形成相应的接触开口以暴露出接触 各个电子设备。

公开(公告)号：US5902120A

公开(公告)日：1999-05-11

申请号：US41805

申请日：1998-03-13

申请人： Guenter Igel ,  Martin Mall

发明人： Guenter Igel ,  Martin Mall

IPC分类号： H01L23/34 ,  B81C1/00 ,  H01L23/36 ,  H01L21/302

CPC分类号： B81C1/00666 ,  B81B2203/0136 ,  B81C2201/0136 ,  B81C2201/0173

摘要： A process is disclosed for producing spatially patterned components from a body. On the backside of the body, a retardation layer with openings is provided for retarding a removal of the material of the body, and areas of migration-capable material are deposited. The body is subjected to a thermal migration process to form migration regions. Then, in a single material removal step, the components are separated from the body and the migration regions are exposed.

摘要翻译： 公开了用于从身体产生空间图案化部件的方法。 在身体的背面，提供具有开口的延迟层，用于延缓身体材料的去除，并沉积可迁移材料的区域。 对身体进行热迁移过程以形成迁移区域。 然后，在单个材料去除步骤中，将组分与身体分离并且暴露出迁移区域。

公开(公告)号：US6127274A

公开(公告)日：2000-10-03

申请号：US30480

申请日：1998-02-25

申请人： Guenter Igel ,  Martin Mall

发明人： Guenter Igel ,  Martin Mall

IPC分类号： H01L21/301 ,  H01L21/60 ,  H01L23/485

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/0001 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042

摘要： There is disclosed a process for producing electronic devices from a semiconductor wafer. The process comprises forming separation regions with a spatial pattern on the semiconductor wafer to provide separation between electronic devices, and depositing a conductive contact layer on the wafer and patterning the contact layer in such a way that conductive terminals extend from the front side of the wafer over at least part of the cross section of the patterned separation regions. The terminals are bared by removing material of the wafer in the semiconductor regions starting from the backside of the wafer, and the terminals of adjacent electronic devices are separated.

摘要翻译： 公开了一种从半导体晶片制造电子器件的方法。 该方法包括在半导体晶片上形成具有空间图案的分离区域，以提供电子器件之间的分离，并且在晶片上沉积导电接触层并以导电端子从晶片的前侧延伸的方式构图接触层 在图案化分离区域的横截面的至少一部分上。 通过从晶片的背面开始从半导体区域去除晶片的材料来露出端子，并且相邻电子器件的端子被分离。

公开(公告)号：US6028009A

公开(公告)日：2000-02-22

申请号：US61439

申请日：1998-04-16

申请人： Guenter Igel ,  Martin Mall

发明人： Guenter Igel ,  Martin Mall

IPC分类号： G01L9/04 ,  B81B3/00 ,  C23F1/00 ,  C23F4/00 ,  G02B6/24 ,  G02B6/36 ,  G02B6/38 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/00 ,  H01P5/00

CPC分类号： G02B6/3692 ,  B81C1/00047 ,  G02B6/3652 ,  G02B6/3806 ,  G02B6/3644 ,  G02B6/3803

摘要： A process is disclosed for fabricating a device with a cavity formed at one end thereof. A body is provided with a depression, and mask layer is applied to the surface of the body and the depression, the mask layer having a lower etch rate than the body. Near the depression, an opening is formed in the mask layer. Starting from the opening, the body is subjected to an isotropic etching process to form the cavity below the mask layer, with the mask layer being essentially preserved and forming in the area of the depression a structure extending into the cavity.

摘要翻译： 公开了一种用于制造在其一端形成有空腔的装置的方法。 身体设置有凹陷，并且掩模层被施加到身体的表面和凹陷，掩模层具有比身体更低的蚀刻速率。 在凹陷附近，在掩模层中形成开口。 从开口开始，对主体进行各向同性蚀刻处理以在掩模层下方形成空腔，掩模层基本上被保留，并且在凹陷区域中形成延伸到空腔中的结构。

公开(公告)号：US07166232B2

公开(公告)日：2007-01-23

申请号：US10433875

申请日：2000-12-21

申请人： Guenter Igel ,  Mirko Lehmann

发明人： Guenter Igel ,  Mirko Lehmann

IPC分类号： H01L21/033 ,  H01L21/768 ,  H01L21/60 ,  H01L21/308

CPC分类号： H01L29/66719 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/76885 ,  H01L21/76897 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/7805 ,  Y10S438/947

摘要： According to a method for producing a solid body (1) including a microstructure (2), the surface of a substrate (3) is provided with a masking layer (6) that is impermeable to a substance to be applied. The substance is then incorporated into the substrate regions not covered by the masking layer (6). A heat treatment is used to diffuse the substance into a substrate region covered by the masking layer (6) such that a concentration gradient of the substance is created in the substrate region covered by the masking layer (6), proceeding from the edge of the masking layer (6) inward with increasing distance from the edge. The masking layer (6) is then removed to expose the substrate region under this layer, and a near-surface layer of the substrate (3) in the exposed substrate region is converted by a chemical conversion reaction into a coating (9) which has a layer thickness profile corresponding to the concentration gradient of the substance contained in this near-surface layer. A supplementary treatment is implemented in a subsection of the coating (9) in which the thickness of the coating (9) is reduced.

摘要翻译： 根据包含微结构（2）的固体（1）的制造方法，在基材（3）的表面设置有对被涂物质不可渗透的掩模层（6）。 然后将该物质并入未被掩蔽层（6）覆盖的衬底区域中。 使用热处理将物质扩散到由掩模层（6）覆盖的衬底区域中，使得在由掩模层（6）覆盖的衬底区域中产生物质的浓度梯度，从 掩蔽层（6）随着与边缘的距离增加而向内。 然后去除掩模层（6）以暴露该层下的衬底区域，并且暴露的衬底区域中的衬底（3）的近表面层通过化学转化反应转化成具有 与该近表面层中所含的物质的浓度梯度对应的层厚度曲线。 在涂层（9）的分段中实施补充处理，其中涂层（9）的厚度减小。

公开(公告)号：US06127268A

公开(公告)日：2000-10-03

申请号：US95986

申请日：1998-06-11

申请人： Guenter Igel

发明人： Guenter Igel

IPC分类号： G01N33/00 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/532 ,  H01L21/44

CPC分类号： H01L21/76885 ,  H01L21/32051 ,  G01N33/005 ,  H01L23/53242 ,  H01L2924/0002

摘要： A process is disclosed for fabricating a semiconductor device with a patterned metal layer (9). A layer (7) of a material with poor adhesion capability to the metal is deposited on the surface of a semiconductor substrate. On the layer (7), pattern lines (8) separated by a distance a are formed of a material with good adhesion capability to the metal, and the metal layer (9) is deposited such that by suitable choice of the ratio of the distance a to its thickness d and of its material properties, the metal layer (9) is caused to adhere only to the pattern lines (8) and to the area of the layer (7) between the pattern lines (8).

摘要翻译： 公开了一种用于制造具有图案化金属层（9）的半导体器件的工艺。 在半导体衬底的表面上沉积有对金属具有差的粘附能力的材料层（7）。 在层（7）上，以距离a分隔的图案线（8）由对金属具有良好粘附能力的材料形成，并且金属层（9）被沉积，使得通过适当地选择距离 根据其厚度d及其材料性质，使金属层（9）仅粘附到图案线（8）和图案线（8）之间的层（7）的区域。

公开(公告)号：US6017775A

公开(公告)日：2000-01-25

申请号：US948127

申请日：1997-10-09

申请人： Guenter Igel ,  Hans-Jurgen Gahle

发明人： Guenter Igel ,  Hans-Jurgen Gahle

IPC分类号： H01L21/8234 ,  G01N27/414 ,  H01L27/088 ,  H01L21/44

CPC分类号： G01N27/414

摘要： The invention relates to a process for manufacturing a sensor with a metal electrode in an MOS structure. During the MOS process, a sensing region with a structure for the metal electrode is formed, this structure being made of a material having predetermined adhesion properties for metals, the sensing region being uncovered by etching the passivating layer, and a metallization of the surface of the MOS structure being carried out in which the metal layer adheres only to the structure for the metal electrode.

摘要翻译： 本发明涉及一种用于制造具有MOS结构中的金属电极的传感器的方法。 在MOS工艺期间，形成具有用于金属电极的结构的感测区域，该结构由具有预定金属粘附性的材料制成，感测区域通过蚀刻钝化层而被覆盖，以及金属化表面的金属化 进行MOS结构，其中金属层仅粘附到金属电极的结构。

公开(公告)号：US5814874A

公开(公告)日：1998-09-29

申请号：US680669

申请日：1996-07-16

申请人： Guenter Igel

发明人： Guenter Igel

IPC分类号： H01L21/329 ,  H01L29/47 ,  H01L29/872 ,  H01L21/075 ,  H01L29/812 ,  H01L31/07

CPC分类号： H01L29/66143 ,  H01L29/872

摘要： A semiconductor device having a semiconductor substrate and an epitaxial layer deposited thereon which supports a patterned insulating layer on which a metal layer is provided. To achieve a lower capacitance of the semiconductor device with unchanged forward voltage, the epitaxial layer consists of first and second epitaxial layers, the first epitaxial layer which adjoins the semiconductor substrate having a higher dopant concentration than and being of the same conductivity type as the second epitaxial layer.

摘要翻译： 一种具有半导体衬底和沉积在其上的外延层的半导体器件，其支撑设置有金属层的图案化绝缘层。 为了实现具有不变正向电压的半导体器件的较低电容，外延层由第一和第二外延层组成，第一外延层邻接半导体衬底，掺杂剂浓度高于第二外延层，并且与第二外延层具有相同的导电类型 外延层。

公开(公告)号：US06425289B1

公开(公告)日：2002-07-30

申请号：US09293067

申请日：1999-04-16

申请人： Guenter Igel ,  Ulrich Sieben ,  Juergen Giehl

发明人： Guenter Igel ,  Ulrich Sieben ,  Juergen Giehl

IPC分类号： G01L708

CPC分类号： G01L9/0073 ,  G01L9/0075

摘要： A capacitive sensor is described which includes a first electrode remote from a second electrode, wherein the first electrode and the second electrode form a measurement capacitance. The first electrode is arranged on a first substrate member and the second electrode is arranged on a second substrate member. At least one of the electrodes has a spatially resolved structure which allows a spatially resolved measurement of the capacitance. The spatial structure of the electrode may be implemented in form of several mutually parallel stripe-shaped elements or in form of a plurality of spaced-apart elements that are arranged in a two-dimensional pattern. Associated with the electrodes are electronic processing units integrated in the substrate members.

摘要翻译： 描述了一种电容传感器，其包括远离第二电极的第一电极，其中第一电极和第二电极形成测量电容。 第一电极布置在第一基板部件上，第二电极布置在第二基板部件上。 电极中的至少一个具有允许空间分辨的电容测量的空间分辨结构。 电极的空间结构可以以几个相互平行的条形元件的形式或以二维图案布置的多个间隔开的元件的形式来实现。 与电极相关联的是集成在基板部件中的电子处理单元。

公开(公告)号：US06370960B1

公开(公告)日：2002-04-16

申请号：US09294162

申请日：1999-04-19

申请人： Guenter Igel ,  Ulrich Sieben ,  Juergen Giehl

发明人： Guenter Igel ,  Ulrich Sieben ,  Juergen Giehl

IPC分类号： G01L912

CPC分类号： G01L9/0073 ,  G01L9/0075

摘要： A capacitive sensor including a first electrode and a second electrode which are disposed opposite each other in spaced-apart relationship to form a capacitor, the first electrode being disposed on a first substrate and the second electrode on a second substrate, the substrates being joined together at the sides of the electrodes, and the second substrate forming, in the area of the second electrode, a diaphragm deformable by pressure. An electronic signal processing device for processing the measurement signals is incorporated in one of the substrates below the electrode disposed thereon.

摘要翻译： 一种电容式传感器，包括第一电极和第二电极，所述第一电极和第二电极以间隔开的关系彼此相对设置以形成电容器，所述第一电极设置在第一基板上，所述第二电极设置在第二基板上，所述基板被接合在一起 在第二电极的区域中，第二基板在电极的侧面形成可通过压力变形的隔膜。 用于处理测量信号的电子信号处理装置并入设置在其上的电极下方的一个基板中。