公开(公告)号：US10985531B2

公开(公告)日：2021-04-20

申请号：US16258616

申请日：2019-01-27

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Binhao Wang ,  Wayne Sorin ,  Michael Renne Ty Tan ,  Sagi Varghese Mathai ,  Stanley Cheung

IPC: H01S5/183 ,  H01S5/42

Abstract: A VCSEL device includes a substrate and a first DBR structure disposed on the substrate. The VCSEL device further includes a cathode contact disposed on a top surface of the first DBR structure. In addition, the VCSEL device includes a VCSEL mesa that is disposed on the top surface of the first DBR structure. The VCSEL mesa includes a quantum well, a non-circularly-shaped oxide aperture region disposed above the quantum well, and a second DBR structure disposed above the non-circularly-shaped oxide aperture region. In addition, the VCSEL mesa includes a selective polarization structure disposed above the second DBR structure and an anode contact disposed above the selective polarization structure.