公开(公告)号：US20140022540A1

公开(公告)日：2014-01-23

申请号：US13945285

申请日：2013-07-18

Applicant: Hitachi High -Technologies Corporation

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Akira KAGOSHIMA ,  Daisuke SHIRAISHI ,  Toshio MASUDA

IPC: G01J1/42

CPC classification number: G01J1/42 ,  G01J3/443 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/32972

Abstract: Among the multiple OES data wavelengths, an analysis device identifies the wavelength of light emissions from a substance contained in the plasma from among multiple light emission wavelengths within the chamber by way of the steps of: measuring the light emission within the chamber during etching processing of the semiconductor wafer; finding the time-based fluctuation due to changes over time on each wavelength in the measured intensity of the light emissions in the chamber; comparing the time-based fluctuations in the wavelength of the light emitted from the pre-specified substance; and by using the comparison results, identifying the wavelength of the light emitted from the substance caused by light emission within the chamber.

Abstract translation: 在多个OES数据波长中，分析装置通过以下步骤来识别来自腔室内的多个发光波长的等离子体中包含的物质的光发射的波长：在蚀刻处理期间测量腔室内的光发射 半导体晶片; 发现由于室内光发射强度的每个波长随时间的变化引起的时间波动; 比较从预先指定的物质发射的光的波长的基于时间的波动; 并且通过使用比较结果，识别由室内的发光引起的从物质发射的光的波长。