公开(公告)号：US5866483A

公开(公告)日：1999-02-02

申请号：US833413

申请日：1997-04-04

申请人： Guang-Jye Shiau ,  Paul Herz ,  Xian-Can Deng ,  Xiaobing Diana Ma

发明人： Guang-Jye Shiau ,  Paul Herz ,  Xian-Can Deng ,  Xiaobing Diana Ma

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/00

CPC分类号： H01L21/32136 ,  H01L21/76838

摘要： A method for etching a tungsten containing layer 25 on a substrate 10 substantially anisotropically, with good etching selectivity, and without forming excessive passivating deposits on the etched features. In the method, the substrate 10 is placed in a plasma zone 55, and process gas comprising SF.sub.6, CHF.sub.3, and N.sub.2, is introduced into the plasma zone. A plasma is formed from the process gas to anisotropically etch the tungsten containing layer 22. Preferably, the plasma is formed using combined inductive and capacitive plasma operated at a predefined inductive:capacitive power ratio.

摘要翻译： 一种用于基本上各向异性地蚀刻基底10上的含钨层25，具有良好的蚀刻选择性并且在蚀刻的特征上不形成过量钝化沉积的方法。 在该方法中，将基板10放置在等离子体区域55中，并且将包含SF 6，CHF 3和N 2的处理气体引入等离子体区域。 从处理气体形成等离子体以各向异性地蚀刻含钨层22.优选地，使用组合的感应和电容等离子体形成等离子体，所述等离子体以预定的感应电容功率比操作。