公开(公告)号：US5866483A

公开(公告)日：1999-02-02

申请号：US833413

申请日：1997-04-04

申请人： Guang-Jye Shiau ,  Paul Herz ,  Xian-Can Deng ,  Xiaobing Diana Ma

发明人： Guang-Jye Shiau ,  Paul Herz ,  Xian-Can Deng ,  Xiaobing Diana Ma

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/00

CPC分类号： H01L21/32136 ,  H01L21/76838

摘要： A method for etching a tungsten containing layer 25 on a substrate 10 substantially anisotropically, with good etching selectivity, and without forming excessive passivating deposits on the etched features. In the method, the substrate 10 is placed in a plasma zone 55, and process gas comprising SF.sub.6, CHF.sub.3, and N.sub.2, is introduced into the plasma zone. A plasma is formed from the process gas to anisotropically etch the tungsten containing layer 22. Preferably, the plasma is formed using combined inductive and capacitive plasma operated at a predefined inductive:capacitive power ratio.

摘要翻译： 一种用于基本上各向异性地蚀刻基底10上的含钨层25，具有良好的蚀刻选择性并且在蚀刻的特征上不形成过量钝化沉积的方法。 在该方法中，将基板10放置在等离子体区域55中，并且将包含SF 6，CHF 3和N 2的处理气体引入等离子体区域。 从处理气体形成等离子体以各向异性地蚀刻含钨层22.优选地，使用组合的感应和电容等离子体形成等离子体，所述等离子体以预定的感应电容功率比操作。

公开(公告)号：US20070224399A1

公开(公告)日：2007-09-27

申请号：US10303653

申请日：2002-11-25

申请人： Oded Rabin ,  Paul Herz ,  Mildred Dresselhaus ,  Akintunde Akinwande ,  Yu-Ming Lin

发明人： Oded Rabin ,  Paul Herz ,  Mildred Dresselhaus ,  Akintunde Akinwande ,  Yu-Ming Lin

IPC分类号： B32B3/00

CPC分类号： C23C14/024 ,  B82Y30/00 ,  C23C14/16 ,  C23C14/5873 ,  C30B7/00 ,  C30B7/005 ,  C30B29/605 ,  H01L35/32 ,  H01L35/34 ,  Y10T156/10 ,  Y10T428/12486 ,  Y10T428/1259 ,  Y10T428/24273 ,  Y10T428/24322 ,  Y10T428/24917

摘要： The presently disclosed invention provides for the fabrication of porous anodic alumina (PAA) films on a wide variety of substrates. The substrate comprises a wafer layer and may further include an adhesion layer deposited on the wafer layer. An anodic alumina template is formed on the substrate. When a rigid substrate such as Si is used, the resulting anodic alumina film is more tractable, easily grown on extensive areas in a uniform manner, and manipulated without danger of cracking. The substrate can be manipulated to obtain free-standing alumina templates of high optical quality and substantially flat surfaces PAA films can also be grown this way on patterned and non-planar surfaces. Furthermore, under certain conditions the resulting PAA is missing the barrier layer (partially or completely) and the bottom of the pores can be readily accessed electrically. The resultant film can be used as a template for forming an array of nanowires wherein the nanowires are deposited electrochemically into the pores of the template. By patterning the electrically conducting adhesion layer, pores in different areas of the template can be addressed independently, and can be filled electrochemically by different materials. Single-stage and multi-stage nanowire-based thermoelectric devices, consisting of both n-type and p-type nanowires, can be assembled on a silicon substrate by this method

摘要翻译： 目前公开的发明提供了在各种基底上制造多孔阳极氧化铝（PAA）膜。 衬底包括晶片层，并且还可以包括沉积在晶片层上的粘附层。 在基板上形成阳极氧化铝模板。 当使用诸如Si的刚性基材时，所得的阳极氧化铝膜更易于处理，容易在均匀的方式在广泛的区域生长，并且操作而没有开裂的危险。 可以操作基底以获得高光学质量的自立式氧化铝模板和基本平坦的表面。也可以在图案化和非平面表面上生长PAA膜。 此外，在某些条件下，所得PAA缺少阻挡层（部分或完全），并且孔的底部可以容易地电接触。 所得膜可以用作形成纳米线阵列的模板，其中纳米线电化学沉积到模板的孔中。 通过图案化导电粘合层，可以独立地解决模板的不同区域中的孔，并且可以通过不同的材料电化学填充。 由n型和p型纳米线组成的单级和多级纳米线型热电装置可以通过这种方法组装在硅衬底上