公开(公告)号：US5953492A

公开(公告)日：1999-09-14

申请号：US975112

申请日：1997-11-20

申请人： Hideki Yabe ,  Kenji Marumoto ,  Sunao Aya ,  Koji Kise ,  Hiroaki Sumitani ,  Takashi Hifumi ,  Hiroshi Watanabe

发明人： Hideki Yabe ,  Kenji Marumoto ,  Sunao Aya ,  Koji Kise ,  Hiroaki Sumitani ,  Takashi Hifumi ,  Hiroshi Watanabe

IPC分类号： G03F1/22 ,  H01L21/027 ,  H01L21/324 ,  G03F9/00 ,  H05B3/20

CPC分类号： G03F1/22

摘要： The X-ray mask manufactured according to the present invention can solve a problem that the thin film stress of the X-ray absorber cannot be made to be zero although the mean thin film stress throughout the X-ray absorber can be made to be zero. The thin film stress distribution over the X-ray absorber 4 after the X-ray absorber 4 has been formed on a silicon substrate 1 is measured, and then inputs of electric power to heaters 9a, 9b and 9c of a hot plate 8 are changed so as to heat the X-ray absorber 4 to temperatures according to a specified temperature distribution with which the thin film stress throughout the X-ray absorber can be made to be zero.

摘要翻译： 根据本发明制造的X射线掩模可以解决尽管X射线吸收体中的平均薄膜应力可以为零，但X射线吸收体的薄膜应力不能为零的问题 。 测量在硅基板1上形成X射线吸收体4之后的X射线吸收体4上的薄膜应力分布，然后改变对热板8的加热器9a，9b，9c的电力输入 以便将X射线吸收体4根据可以使整个X射线吸收体中的薄膜应力为零的规定的温度分布加热到温度。