POWER CONSUMPTION ESTIMATION APPARATUS
    12.
    发明申请
    POWER CONSUMPTION ESTIMATION APPARATUS 有权
    消耗电力消耗设备

    公开(公告)号:US20100305751A1

    公开(公告)日:2010-12-02

    申请号:US12762687

    申请日:2010-04-19

    IPC分类号: G06F19/00

    摘要: A power consumption estimation apparatus comprising an execution part for executing an operation program of a robot, a velocity calculation part for each axis drive motor of the robot, a torque calculation part for each axis drive motor, a current value calculation part for calculating a current value of each axis drive motor; a mechanical work calculation part; a motor heat amount calculation part; and an amplifier heat amount calculation part for each axis drive motor, an output electric energy calculation part for the robot controller, a controller heat calculation part for the robot controller, and a power consumption calculation part for the robot system based on the mechanical work of each axis drive motor, the amount of heat of each axis drive motor, the amount of heat of the amplifier, and the amount of heat of the robot controller.

    摘要翻译: 一种功率消耗估计装置,包括用于执行机器人的操作程序的执行部分,机器人的每个轴驱动电动机的速度计算部分,每个轴驱动电动机的转矩计算部分,用于计算电流的电流值计算部分 每轴驱动电机的值; 机械作业计算部分; 马达热量计算部; 以及用于各轴驱动电动机的放大器热量计算部,机器人控制器的输出电能计算部,机器人控制器的控制器热计算部,以及基于机器人的机械动作的机器人系统的功耗计算部 各轴驱动马达,各轴驱动马达的热量,放大器的热量和机器人控制器的热量。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    13.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20120025326A1

    公开(公告)日:2012-02-02

    申请号:US13269818

    申请日:2011-10-10

    IPC分类号: H01L29/78 H01L21/336

    摘要: An interface oxide layer, a gate insulating film, and a gate electrode are sequentially provided on the upper surface of a semiconductor substrate. The gate insulating film has a first high-k film and a second high-k film. The first high-k film is provided on the interface oxide layer, and contains nitrogen. The second high-k film is provided on the first high-k film, and contains nitrogen. The first high-k film has a lower nitrogen concentration than the second high-k film.

    摘要翻译: 在半导体衬底的上表面上依次设置界面氧化物层,栅极绝缘膜和栅电极。 栅极绝缘膜具有第一高k膜和第二高k膜。 第一高k膜设置在界面氧化物层上,并含有氮。 在第一高k膜上设置第二高k膜,并含有氮。 第一高k膜具有比第二高k膜更低的氮浓度。