公开(公告)号：US20160118106A1

公开(公告)日：2016-04-28

申请号：US14890335

申请日：2013-05-31

Applicant: HITACHI, LTD.

Inventor： CHIHIRO YOSHIMURA ,  Masanao YAMAOKA ,  Tomonori SEKIGUCHI ,  Tatsuya TOMARU

IPC: G11C11/419

CPC classification number: G11C11/419 ,  G06F7/588 ,  G06N3/08 ,  G11C7/04 ,  G11C7/1006 ,  G11C11/1675

Abstract: It is an object of the present invention to provide a device which can be easily manufactured and obtain a ground state of an arbitrary Ising model. A semiconductor device includes a first memory cell and a second memory cell that interacts with the first memory cell, in which storage content of the first memory cell and the second memory cell is stochastically inverted. The storage content is stochastically inverted by dropping threshold voltages of the first memory cell and the second memory cell. The threshold voltages of the first and second memory cells are dropping by controlling substrate biases, power voltages, or trip points of the first and second memory cells.

Abstract translation: 本发明的一个目的是提供一种易于制造并获得任意伊辛模型的基态的装置。 半导体器件包括第一存储器单元和与第一存储器单元相互作用的第二存储器单元，其中第一存储单元和第二存储器单元的存储内容随机转换。 通过降低第一存储单元和第二存储单元的阈值电压，存储内容随机地反转。 通过控制第一和第二存储器单元的衬底偏置，电源电压或跳变点，第一和第二存储器单元的阈值电压下降。