公开(公告)号：US20220260930A1

公开(公告)日：2022-08-18

申请号：US17732969

申请日：2022-04-29

Applicant: Hitachi High-Tech Corporation

Inventor： Takuma Yamamoto ,  Hiroya Ohta ,  Kenji Tanimoto ,  Yusuke Abe ,  Tomohiro Tamori ,  Masaaki Nojiri

IPC: G03F7/20 ,  G01B15/04 ,  G01N23/225

Abstract: A computation device is provided for measuring the dimensions of patterns formed on a sample based on a signal obtained from a charged particle beam device. The computation device includes a positional deviation amount calculation unit for calculating the amount of positional deviation in a direction parallel to a wafer surface between two patterns having different heights based on an image acquired at a given beam tilt angle; a pattern inclination amount calculation unit for calculating an amount of pattern inclination from the amount of positional deviation using a predetermined relational expression for the amount of positional deviation and the amount of pattern inclination; and a beam tilt control amount calculation unit for controlling the beam tilt angle so as to match the amount of pattern inclination. The pattern measurement device sets the beam tilt angle to a calculated beam tilt angle, reacquires an image and measures the patterns.

公开(公告)号：US20210043420A1

公开(公告)日：2021-02-11

申请号：US16941806

申请日：2020-07-29

Applicant: Hitachi High-Tech Corporation

Inventor： Takeyoshi Ohashi ,  Yusuke Abe ,  Kenji Tanimoto ,  Kaori Bizen ,  Hyejin Kim

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/12

Abstract: A scanning electron microscope includes an electron-optical system including an electron source and an objective lens, a stage on which a sample is placed, a secondary electron detector disposed adjacent to the electron source relative to the objective lens and configured to detect secondary electrons, a backscattered electron detector disposed between the objective lens and the stage and configured to detect backscattered electrons, a backscattered electron detection system controller configured to apply a voltage to the backscattered electron detector, and a device-control computer configured to detect a state of an electrical charge carried by the backscattered electron detector based on signal intensity at the secondary electron detector when the primary electrons are applied to the sample with a predetermined voltage applied to the backscattered electron detector.