公开(公告)号：US12068128B2

公开(公告)日：2024-08-20

申请号：US17702343

申请日：2022-03-23

Applicant: Hitachi High-Tech Corporation

Inventor： Yusuke Nakamura ,  Yusuke Abe ,  Kenji Tanimoto ,  Takeyoshi Ohashi

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/26

CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J37/265 ,  H01J2237/24475 ,  H01J2237/2448

Abstract: An object of the invention is to acquire a high-quality image while maintaining an improvement in throughput of image acquisition (measurement (length measurement)). The present disclosure provides a charged particle beam system including a charged particle beam device and a computer system configured to control the charged particle beam device. The charged particle beam device includes an objective lens, a sample stage, and a backscattered electron detector that is disposed between the objective lens and the sample stage and that adjusts a focus of a charged particle beam with which a sample is irradiated. The computer system adjusts a value of an electric field on the sample in accordance with a change in a voltage applied to the backscattered electron detector.

公开(公告)号：US11626266B2

公开(公告)日：2023-04-11

申请号：US17501249

申请日：2021-10-14

Applicant: Hitachi High-Tech Corporation

Inventor： Keiichiro Hitomi ,  Kenji Tanimoto ,  Yusuke Abe ,  Takuma Yamamoto ,  Kei Sakai ,  Satoru Yamaguchi ,  Yasunori Goto ,  Shuuichirou Takahashi

IPC: H01J37/22 ,  H01J37/21 ,  H01J37/147

Abstract: Provided is a charged particle beam device capable of focusing with high accuracy even when a charged particle beam has a large off-axis amount. The charged particle beam device generates an observation image of a sample by irradiating the sample with a charged particle beam, and includes: a deflection unit that inclines the charged particle beam; a focusing lens that focuses the charged particle beam; an adjustment unit that adjusts a lens strength of the focusing lens based on an evaluation value calculated from the observation image; a storage unit that stores a relationship between a visual field movement amount and the lens strength; and a filter setting unit that calculates the visual field movement amount based on an inclination angle of the charged particle beam and the relationship, and sets an image filter to be superimposed on the observation image based on the calculated visual field movement amount.

公开(公告)号：US11276554B2

公开(公告)日：2022-03-15

申请号：US16941806

申请日：2020-07-29

Applicant: Hitachi High-Tech Corporation

Inventor： Takeyoshi Ohashi ,  Yusuke Abe ,  Kenji Tanimoto ,  Kaori Bizen ,  Hyejin Kim

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/12

Abstract: A scanning electron microscope includes an electron-optical system including an electron source and an objective lens, a stage on which a sample is placed, a secondary electron detector disposed adjacent to the electron source relative to the objective lens and configured to detect secondary electrons, a backscattered electron detector disposed between the objective lens and the stage and configured to detect backscattered electrons, a backscattered electron detection system controller configured to apply a voltage to the backscattered electron detector, and a device-control computer configured to detect a state of an electrical charge carried by the backscattered electron detector based on signal intensity at the secondary electron detector when the primary electrons are applied to the sample with a predetermined voltage applied to the backscattered electron detector.

公开(公告)号：US20210384006A1

公开(公告)日：2021-12-09

申请号：US17338353

申请日：2021-06-03

Applicant: Hitachi High-Tech Corporation

Inventor： Takeyoshi Ohashi ,  Hyejin Kim ,  Yusuke Abe ,  Kenji Tanimoto

IPC: H01J37/21 ,  G06T1/00 ,  G06T7/73 ,  H01J37/22 ,  H01J37/145

Abstract: When focus adjustment is performed according to the height of the surface of a sample at each inspection point in order to continuously inspect a plurality of inspection points on a wafer by using an electron microscope, even when the focus adjustment by an electrostatic lens in which a variation of heights of inspection points is greater than a predetermined range, and that can perform adjustment at a high speed and adjustment by an electromagnetic lens with a low speed are required to be used together, a flow of focus adjustment in which the number of times of the adjustment by the electromagnetic lens is reduced by using a relation of changes of heights at inspection points, an inspection order, and a range in which an electrostatic focus can be performed is realized, so that inspection with high throughput is made possible.

公开(公告)号：US12174551B2

公开(公告)日：2024-12-24

申请号：US17732969

申请日：2022-04-29

Applicant: Hitachi High-Tech Corporation

Inventor： Takuma Yamamoto ,  Hiroya Ohta ,  Kenji Tanimoto ,  Yusuke Abe ,  Tomohiro Tamori ,  Masaaki Nojiri

IPC: G03F7/00 ,  G01B15/04 ,  G01N23/225 ,  G03F7/20

Abstract: A computation device is provided for measuring the dimensions of patterns formed on a sample based on a signal obtained from a charged particle beam device. The computation device includes a positional deviation amount calculation unit for calculating the amount of positional deviation in a direction parallel to a wafer surface between two patterns having different heights based on an image acquired at a given beam tilt angle; a pattern inclination amount calculation unit for calculating an amount of pattern inclination from the amount of positional deviation using a predetermined relational expression for the amount of positional deviation and the amount of pattern inclination; and a beam tilt control amount calculation unit for controlling the beam tilt angle so as to match the amount of pattern inclination. The pattern measurement device sets the beam tilt angle to a calculated beam tilt angle, reacquires an image and measures the patterns.

公开(公告)号：US11164720B2

公开(公告)日：2021-11-02

申请号：US16747761

申请日：2020-01-21

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Kenji Yasui ,  Mayuka Osaki ,  Makoto Suzuki ,  Hirohiko Kitsuki ,  Toshiyuki Yokosuka ,  Daisuke Bizen ,  Yusuke Abe

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/20 ,  G01N23/2251

Abstract: To measure a depth of a three-dimensional structure, for example, a hole or a groove, formed in a sample without preparing information in advance, an electron microscope detects, among emitted electrons generated by irradiating a sample with a primary electron beam, an emission angle in a predetermined range, the emission angle being formed between an axial direction of the primary electron beam and an emission direction of the emitted electrons, and outputs a detection signal corresponding to the number of the emitted electrons detected. An emission angle distribution of a detection signal is obtained based on a plurality of detection signals, and an opening angle is obtained based on a change point of the emission angle distribution, the opening angle being based on an optical axis direction of the primary electron beam with respect to the bottom portion of the three-dimensional structure.

公开(公告)号：US11251018B2

公开(公告)日：2022-02-15

申请号：US17255724

申请日：2018-07-02

Applicant: Hitachi High-Tech Corporation

Inventor： Yasunari Sohda ,  Kaori Bizen ,  Yusuke Abe ,  Kenji Tanimoto

IPC: H01J37/28 ,  H01J37/12 ,  H01J37/147 ,  H01J37/153 ,  H01J37/21 ,  H01J37/244 ,  H01J37/26

Abstract: Provided is a scanning electron microscope which can perform high-speed focus correction even when an electron beam having high energy is used. The scanning electron microscope includes an electron optical system including an electron source 100 that emits an electron beam and an objective lens 113, a sample stage 1025 which is disposed on a stage 115 and on which a sample 114 is placed, a backscattered electron detector 1023 which is disposed between the objective lens and the sample stage and is configured to detect backscattered electrons 1017 emitted due to interaction between the electron beam and the sample, a backscattered electron detection system control unit 138 which is provided corresponding to the backscattered electron detector and is configured to apply a voltage to the backscattered electron detector, and a device control calculation device 146. The objective lens has an opening in a stage direction, and the device control calculation device performs focus correction of the electron beam by controlling the voltage applied to the backscattered electron detector from the backscattered electron detection system control unit.

公开(公告)号：US11211226B2

公开(公告)日：2021-12-28

申请号：US16810969

申请日：2020-03-06

Applicant: Hitachi High-Tech Corporation

Inventor： Toshiyuki Yokosuka ,  Hirohiko Kitsuki ,  Daisuke Bizen ,  Makoto Suzuki ,  Yusuke Abe ,  Kenji Yasui ,  Mayuka Osaki ,  Hideyuki Kazumi

IPC: H01J37/28 ,  H01J37/22 ,  H01J37/244

Abstract: The present disclosure provides a pattern cross-sectional shape estimation system which includes a charged particle ray device which includes a scanning deflector that scans a charged particle beam, a detector that detects charged particles, and an angle discriminator that is disposed in a front stage of the detector and discriminates charged particles to be detected, and an arithmetic device that generates a luminance of an image, and calculates a signal waveform of a designated region on the image using the luminance. The arithmetic device generates angle discrimination images using signal electrons at different detection angles, and estimates a side wall shape of a measurement target pattern.

公开(公告)号：US11670479B2

公开(公告)日：2023-06-06

申请号：US17338353

申请日：2021-06-03

Applicant: Hitachi High-Tech Corporation

Inventor： Takeyoshi Ohashi ,  Hyejin Kim ,  Yusuke Abe ,  Kenji Tanimoto

IPC: H01J37/28 ,  H01J37/21 ,  G06T1/00 ,  G06T7/73 ,  H01J37/145 ,  H01J37/22

CPC classification number: H01J37/21 ,  G06T1/0007 ,  G06T7/73 ,  H01J37/145 ,  H01J37/222 ,  G06T2200/24 ,  G06T2207/10056 ,  G06T2207/30148

Abstract: When focus adjustment is performed according to the height of the surface of a sample at each inspection point in order to continuously inspect a plurality of inspection points on a wafer by using an electron microscope, even when the focus adjustment by an electrostatic lens in which a variation of heights of inspection points is greater than a predetermined range, and that can perform adjustment at a high speed and adjustment by an electromagnetic lens with a low speed are required to be used together, a flow of focus adjustment in which the number of times of the adjustment by the electromagnetic lens is reduced by using a relation of changes of heights at inspection points, an inspection order, and a range in which an electrostatic focus can be performed is realized, so that inspection with high throughput is made possible.

公开(公告)号：US11435178B2

公开(公告)日：2022-09-06

申请号：US16638634

申请日：2017-08-25

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Yasunari Sohda ,  Yoshinori Nakayama ,  Kaori Bizen ,  Hiroya Ohta ,  Yusuke Abe

IPC: G01B15/00 ,  H01J37/10 ,  H01J37/147 ,  H01J37/20 ,  H01J37/244 ,  H01J37/28

Abstract: To implement a calibration sample by which an incident angle can be measured with high accuracy, an electron beam adjustment method, and an electron beam apparatus using the calibration sample. To adjust an electron beam using a calibration sample, the calibration sample includes a silicon single crystal substrate 201 whose upper surface is a {110} plane, a first recess structure 202 opening in the upper surface and extending in a first direction, and a second recess structure 203 opening in the upper surface and extending in a second direction intersecting the first direction, in which the first recess structure and the second recess structure each include a first side surface and a first bottom surface that intersects the first side surface, and a second side surface and a second bottom surface that intersects the second side surface, the first side surface and the second side surface are {111} planes, and the first bottom surface and the second bottom surface are crystal planes different from the {110} planes.