公开(公告)号：US10163982B2

公开(公告)日：2018-12-25

申请号：US15474154

申请日：2017-03-30

Applicant: Intel Corporation

Inventor： Andrea Redaelli ,  Innocenzo Tortorelli ,  Fabio Pellizzer ,  Agostino Pirovano ,  DerChang Kau

IPC: H01L27/24 ,  H01L45/00 ,  H01L23/528 ,  G11C13/00

Abstract: Described herein are multi-deck memory devices with an inverted deck. For example, in one embodiment a memory device includes a first deck of memory cells including layers of material, including a layer of storage material and a layer of selector material, and a second deck of memory cells over the first deck of memory cells, the second deck comprising layers of material in an order opposite relative to the first deck. In one such embodiment, conductive bitlines located between the first and second decks are common to both decks. Inverting the second deck can enable operating the decks symmetrically despite accessing the decks with opposite polarity voltages.