公开(公告)号：US07869117B2

公开(公告)日：2011-01-11

申请号：US12126506

申请日：2008-05-23

Applicant: Jae-young Choi ,  Jai-yong Han

Inventor： Jae-young Choi ,  Jai-yong Han

IPC: G02B26/00 ,  G09G3/34

CPC classification number: G02F1/167 ,  G02F2001/1678

Abstract: Provided is an electrophoretic display device. The electrophoretic display device includes a first substrate and a second substrate forming a space receiving electrophoretic particles, and a first electrode and a second electrode formed on the first substrate and the second substrate respectively. The electrophoretic particles include reflective particles having a first electric polarity and reflecting a first light in visible wavelength bands, and light emission particles having a second electric polarity and emitting a second light by an optical stimulation. The first and second lights are in a substantially same color range of wavelength in a same pixel region.

Abstract translation: 提供一种电泳显示装置。 电泳显示装置包括第一基板和形成接收电泳颗粒的空间的第二基板，以及分别形成在第一基板和第二基板上的第一电极和第二电极。 电泳粒子包括具有第一电极性并反射可见波长带中的第一光的反射粒子和具有第二电极性并通过光学刺激发射第二光的发光粒子。 第一和第二光在相同像素区域中具有基本上相同的波长的颜色范围。

公开(公告)号：US07314515B2

公开(公告)日：2008-01-01

申请号：US11220709

申请日：2005-09-08

Applicant: Jai-yong Han

Inventor： Jai-yong Han

IPC: C30B1/00

CPC classification number: C30B29/406 ,  C30B25/00 ,  C30B25/02 ,  C30B25/08 ,  C30B29/64 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1016

Abstract: An apparatus for fabricating a GaN single crystal and a fabrication method for producing GaN single crystal ingot are provided. The apparatus includes: a reactor including a ceiling, a floor and a wall with a predetermined height encompassing an internal space between the ceiling and the floor, wherein the ceiling is opposite to the floor; a quartz vessel on the floor containing Ga metal; a mount installed on the ceiling on which a GaN substrate is mounted, the GaN substrate being opposite to the quartz vessel; a first gas supplying unit supplying the quartz vessel with hydrogen chloride (HCl) gas; a second gas supplying unit supplying the internal space of the reactor with ammonia (NH3) gas; and a heating unit installed in conjunction with the wall of the reactor for heating the internal space, wherein the lower portion of the internal space is heated to a higher temperature than the upper portion.

Abstract translation: 提供一种用于制造GaN单晶的装置和用于制造GaN单晶锭的制造方法。 该装置包括：包括天花板，地板和具有预定高度的壁的反应器，其包围天花板和地板之间的内部空间，其中天花板与地板相对; 位于地板上的含有Ga金属的石英容器; 安装在其上安装GaN衬底的天花板上的安装座，所述GaN衬底与所述石英容器相对; 向石英容器供应氯化氢（HCl）气体的第一气体供给单元; 向反应器的内部空间供应氨（NH 3）气体的第二气体供给单元; 以及与反应器的壁结合安装的用于加热内部空间的加热单元，其中内部空间的下部被加热到比上部更高的温度。