公开(公告)号：US20220393675A1

公开(公告)日：2022-12-08

申请号：US17852785

申请日：2022-06-29

Applicant: Infineon Technologies AG

Inventor： Zheming LI ,  Mark-Matthias BAKRAN ,  Daniel DOMES ,  Robert MAIER ,  Franz-Josef NIEDERNOSTHEIDE

IPC: H03K17/04 ,  H03K17/042

Abstract: A gate driver system includes a gate driver circuit coupled to a gate terminal of a transistor and configured to generate an on-current during a plurality of turn-on switching events to turn on the transistor, wherein the gate driver circuit includes a first driver configured to source a first portion of the on-current to the gate terminal to charge a first portion of the gate voltage and a second driver configured to, during a first boost interval, source a second portion of the on-current to the gate terminal to charge a second portion of the gate voltage; a measurement circuit configured to measure a transistor parameter indicative of an oscillation of a load current for a turn-on switching event; and a controller configured to receive the measured transistor parameter and regulate a length of the first boost interval based on the measured transistor parameter.