公开(公告)号：US20170140938A1

公开(公告)日：2017-05-18

申请号：US15348245

申请日：2016-11-10

Applicant: Infineon Technologies AG

Inventor： Franz-Josef NIEDERNOSTHEIDE ,  Johannes Georg LAVEN ,  Hans-Joachim SCHULZE

IPC: H01L21/265 ,  H01L21/266 ,  H01L21/324

CPC classification number: H01L21/2652 ,  H01L21/263 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/266 ,  H01L21/324

Abstract: A method of forming a semiconductor device includes irradiating a semiconductor body with particles. Dopant ions are implanted into the semiconductor body such that the dopant ions are configured to be activated as donors or acceptors. Thereafter, the semiconductor body is processed thermally.

公开(公告)号：US20170117394A1

公开(公告)日：2017-04-27

申请号：US15296594

申请日：2016-10-18

Applicant: Infineon Technologies AG

Inventor： Frank Dieter PFIRSCH ,  Franz-Josef NIEDERNOSTHEIDE ,  Hans-Joachim SCHULZE ,  Stephan VOSS

IPC: H01L29/739 ,  H01L29/08 ,  H01L29/15

CPC classification number: H01L29/7395 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/157 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/7397 ,  H01L29/8611

Abstract: A superjunction bipolar transistor includes an active transistor cell area that includes active transistor cells electrically connected to a first load electrode at a front side of a semiconductor body. A superjunction area overlaps the active transistor cell area and includes a low-resistive region and a reservoir region outside of the low-resistive region. The low-resistive region includes a first superjunction structure with a first vertical extension with respect to a first surface of the semiconductor body. The reservoir region includes no superjunction structure or a second superjunction structure with a mean second vertical extension smaller than the first vertical extension.

公开(公告)号：US20180269872A1

公开(公告)日：2018-09-20

申请号：US15921893

申请日：2018-03-15

Applicant: Infineon Technologies AG

Inventor： Thomas BASLER ,  Roman BABURSKE ,  Johannes Georg LAVEN ,  Franz-Josef NIEDERNOSTHEIDE ,  Hans-Joachim SCHULZE

IPC: H03K17/567 ,  H03K17/687 ,  H01L27/06 ,  H01L27/088 ,  H01L29/78 ,  H01L29/739 ,  H01L29/778 ,  H01L29/165 ,  H01L29/16 ,  H01L29/808

CPC classification number: H03K17/567 ,  H01L27/0635 ,  H01L27/088 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/7393 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/808 ,  H01L2924/10272 ,  H01L2924/13055 ,  H01L2924/13091 ,  H03K17/12 ,  H03K17/687 ,  H03K2217/0036

Abstract: Transistor devices are described that include a first transistor and a second transistor coupled in parallel between a first terminal and a second terminal. The second transistor is based on a wide bandgap semiconductor material. The second transistor has a breakthrough voltage lower than a breakthrough voltage of the first transistor over a predetermined operating range. The predetermined operating range comprises at least an operating range for which the transistor device is specified.

公开(公告)号：US20180158937A1

公开(公告)日：2018-06-07

申请号：US15856426

申请日：2017-12-28

Applicant: Infineon Technologies AG

Inventor： Frank Dieter PFIRSCH ,  Franz-Josef NIEDERNOSTHEIDE ,  Hans-Joachim SCHULZE ,  Stephan VOSS

IPC: H01L29/739 ,  H01L29/15 ,  H01L29/08

CPC classification number: H01L29/7395 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/157 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/7397 ,  H01L29/8611

Abstract: A superjunction bipolar transistor includes an active transistor cell area that includes active transistor cells electrically connected to a first load electrode at a front side of a semiconductor body. A superjunction area overlaps the active transistor cell area and includes a low-resistive region and a reservoir region outside of the low-resistive region. The low-resistive region includes a first superjunction structure with a first vertical extension with respect to a first surface at the front side of the semiconductor body. The reservoir region includes no superjunction structure such that the reservoir region includes the semiconductor body that extends from a region located at the first surface to a drain region.

公开(公告)号：US20240088890A1

公开(公告)日：2024-03-14

申请号：US18519563

申请日：2023-11-27

Applicant: Infineon Technologies AG

Inventor： Guang ZENG ,  Franz-Josef NIEDERNOSTHEIDE ,  Mark-Matthias BAKRAN ,  Zheming LI

IPC: H03K17/16 ,  H03K17/687

CPC classification number: H03K17/166 ,  H03K17/168 ,  H03K17/687 ,  H03K2217/0027

Abstract: A method of driving a transistor between switching states includes controlling a transition of a gate voltage at a gate terminal of a transistor during each of a plurality of turn-off switching events to turn off the transistor, wherein the transistor is configured to be turned off according to a desaturation time during each of the plurality of turn-off switching events; measuring a transistor parameter indicative of a voltage slew rate of the transistor for a first turn-off switching event during which the transistor is transitioned from an on state to an off state; and regulating a duration of the desaturation time for a next turn-off switching event based on the measured transistor parameter.

公开(公告)号：US20230353135A1

公开(公告)日：2023-11-02

申请号：US18350790

申请日：2023-07-12

Applicant: Infineon Technologies AG

Inventor： Zheming LI ,  Mark-Matthias BAKRAN ,  Daniel DOMES ,  Robert MAIER ,  Franz-Josef NIEDERNOSTHEIDE

IPC: H03K17/04 ,  H03K17/042

CPC classification number: H03K17/0406 ,  H03K17/042 ,  H03K17/04206 ,  H03K2217/0027

Abstract: A gate driver system includes a gate driver circuit coupled to a gate terminal of a transistor and configured to control a gate voltage to generate an on-current during a plurality of turn-on switching events to turn on the transistor. The gate driver circuit includes a first driver configured to source a first portion of the on-current to the gate terminal to charge a first portion of the gate voltage, and a second driver configured to, during a boost interval, source a second portion of the on-current to the gate terminal to charge a second portion of the gate voltage. A control circuit measures a transistor parameter representative of a reverse recovery current of the transistor for a turn-on switching event during which the transistor is transitioned to an on state and controls the first driver and controls the second driver based on the measured transistor parameter.

公开(公告)号：US20170125407A1

公开(公告)日：2017-05-04

申请号：US15299645

申请日：2016-10-21

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim SCHULZE ,  Franz-Josef NIEDERNOSTHEIDE ,  Frank Dieter PFIRSCH ,  Francisco Javier SANTOS RODRIGUEZ ,  Stephan VOSS ,  Wolfgang WAGNER

IPC: H01L27/088 ,  H01L29/423 ,  H01L29/739 ,  H01L21/8234 ,  H01L27/082 ,  H01L29/49 ,  H01L29/06

CPC classification number: H01L27/088 ,  H01L21/823418 ,  H01L21/82345 ,  H01L21/823475 ,  H01L27/0629 ,  H01L27/082 ,  H01L29/0607 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/4916 ,  H01L29/4983 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/66363 ,  H01L29/7393 ,  H01L29/7396 ,  H01L29/7397 ,  H01L29/749

Abstract: A semiconductor device and a method for producing thereof is provided. The semiconductor device includes a plurality of device cells, each comprising a body region, a source region, and a gate electrode adjacent to the body region and dielectrically insulated from the body region by a gate dielectric; and an electrically conductive gate layer comprising the gate electrodes or electrically connected to the gate electrodes of the plurality of device cells. The gate layer is electrically connected to a gate conductor and includes at least one of an increased resistance region and a decreased resistance region.

公开(公告)号：US20240039526A1

公开(公告)日：2024-02-01

申请号：US17875876

申请日：2022-07-28

Applicant: Infineon Technologies AG

Inventor： Guang ZENG ,  Franz-Josef NIEDERNOSTHEIDE ,  Mark-Matthias BAKRAN ,  Zheming LI

IPC: H03K17/16

CPC classification number: H03K17/166 ,  H03K17/168 ,  H03K2217/0027

Abstract: A method of driving a transistor between switching states includes controlling a transition of a gate voltage at a gate terminal of a transistor during each of a plurality of turn-off switching events to turn off the transistor, wherein the transistor is configured to be turned off according to a desaturation time during each of the plurality of turn-off switching events; measuring a transistor parameter indicative of a voltage slew rate of the transistor for a first turn-off switching event during which the transistor is transitioned from an on state to an off state; and regulating a duration of the desaturation time for a next turn-off switching event based on the measured transistor parameter.

公开(公告)号：US20230088339A1

公开(公告)日：2023-03-23

申请号：US18060639

申请日：2022-12-01

Applicant: Infineon Technologies AG

Inventor： Zheming LI ,  Mark-Matthias BAKRAN ,  Daniel DOMES ,  Robert MAIER ,  Franz-Josef NIEDERNOSTHEIDE

IPC: H03K17/042 ,  H03K5/24 ,  H03K17/04

Abstract: A method is provided for driving a half bridge circuit that includes a first transistor and a second transistor. The method includes generating an off-current during a plurality of turn-off switching events to control a gate voltage of the second transistor; measuring a transistor parameter of the second transistor during a first turn-off switching event during which the second transistor is transitioned to an off state, wherein the transistor parameter is indicative of an oscillation at the first transistor during a corresponding turn-on switching event during which the first transistor is transitioned to an on state; and activating a portion of the off-current for the second turn-off switching event, including regulating an interval length of the second portion for the second turn-off switching event based on the measured transistor parameter measured during the first turn-off switching event.

公开(公告)号：US20230061697A1

公开(公告)日：2023-03-02

申请号：US17458942

申请日：2021-08-27

Applicant: Infineon Technologies AG

Inventor： Zheming LI ,  Mark-Matthias BAKRAN ,  Daniel DOMES ,  Robert MAIER ,  Franz-Josef NIEDERNOSTHEIDE

IPC: H03K17/042 ,  H03K5/24

Abstract: A method is provided for driving a half bridge circuit that includes a first transistor and a second transistor that are switched in a complementary manner. The method includes generating an off-current during a plurality of turn-off switching events to control a gate voltage of the second transistor; measuring a transistor parameter of the second transistor during a first turn-off switching event during which the second transistor is transitioned to an off state, wherein the transistor parameter is indicative of an oscillation at the first transistor during a corresponding turn-on switching event during which the first transistor is transitioned to an on state; and activating a portion of the off-current for the second turn-off switching event, including regulating an interval length of the second portion for the second turn-off switching event based on the measured transistor parameter measured during the first turn-off switching event.