公开(公告)号：US20210193844A1

公开(公告)日：2021-06-24

申请号：US16725161

申请日：2019-12-23

Applicant: Intel Corporation

Inventor： Rahul RAMASWAMY ,  Hsu-Yu CHANG ,  Babak FALLAHAZAD ,  Hsiao-Yuan WANG ,  Ting CHANG ,  Tanuj TRIVEDI ,  Jeong Dong KIM ,  Nidhi NIDHI ,  Walid M. HAFEZ

IPC: H01L29/786 ,  H01L29/78 ,  H01L29/423 ,  H01L29/10 ,  H01L29/66

Abstract: Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a source, a drain, and a semiconductor channel between the source and the drain. In an embodiment, the semiconductor channel has a non-uniform strain through a thickness of the semiconductor channel. In an embodiment, the semiconductor device further comprises a gate stack around the semiconductor channel.

公开(公告)号：US20210184032A1

公开(公告)日：2021-06-17

申请号：US16713648

申请日：2019-12-13

Applicant: Intel Corporation

Inventor： Nidhi NIDHI ,  Rahul RAMASWAMY ,  Walid M. HAFEZ ,  Hsu-Yu CHANG ,  Ting CHANG ,  Babak FALLAHAZAD ,  Tanuj TRIVEDI ,  Jeong Dong KIM

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/786 ,  H01L29/423 ,  H01L29/66

Abstract: Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment a semiconductor device comprises a substrate, a source region over the substrate, a drain region over the substrate, and a semiconductor body extending from the source region to the drain region. In an embodiment, the semiconductor body has a first region with a first conductivity type and a second region with a second conductivity type. In an embodiment, the semiconductor device further comprises a gate structure over the first region of the semiconductor body, where the gate structure is closer to the source region than the drain region.

公开(公告)号：US20210184000A1

公开(公告)日：2021-06-17

申请号：US16713670

申请日：2019-12-13

Applicant: Intel Corporation

Inventor： Rahul RAMASWAMY ,  Walid M. HAFEZ ,  Tanuj TRIVEDI ,  Jeong Dong KIM ,  Ting CHANG ,  Babak FALLAHAZAD ,  Hsu-Yu CHANG ,  Nidhi NIDHI

IPC: H01L29/06 ,  H01L29/78 ,  H01L27/092 ,  H01L29/423 ,  H01L21/8238

Abstract: Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a substrate, and a first transistor of a first conductivity type over the substrate. In an embodiment, the first transistor comprises a first semiconductor channel, and a first gate electrode around the first semiconductor channel. In an embodiment, the semiconductor device further comprises a second transistor of a second conductivity type above the first transistor. The second transistor comprises a second semiconductor channel, and a second gate electrode around the second semiconductor channel. In an embodiment, the second gate electrode and the first gate electrode comprise different materials.

公开(公告)号：US20210183850A1

公开(公告)日：2021-06-17

申请号：US16713656

申请日：2019-12-13

Applicant: Intel Corporation

Inventor： Nidhi NIDHI ,  Rahul RAMASWAMY ,  Walid M. HAFEZ ,  Hsu-Yu CHANG ,  Ting CHANG ,  Babak FALLAHAZAD ,  Tanuj TRIVEDI ,  Jeong Dong KIM ,  Ayan KAR ,  Benjamin ORR

IPC: H01L27/02 ,  H01L29/06 ,  H01L29/66

Abstract: Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a semiconductor substrate and a source. The source has a first conductivity type and a first insulator separates the source from the semiconductor substrate. The semiconductor device further comprises a drain. The drain has a second conductivity type that is opposite from the first conductivity type, and a second insulator separates the drain from the semiconductor substrate. In an embodiment, the semiconductor further comprises a semiconductor body between the source and the drain, where the semiconductor body is spaced away from the semiconductor substrate.