公开(公告)号：US20190341384A1

公开(公告)日：2019-11-07

申请号：US16473699

申请日：2017-03-15

Applicant: Intel Corporation

Inventor： Aaron D. Lilak ,  Patrick Theofanis ,  Cory E. Weber ,  Stephen M. Cea ,  Rishabh Mehandru

IPC: H01L27/105 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/78 ,  H01L21/32

Abstract: An integrated circuit structure is provided which comprises: a stack of source regions of a stack of transistors and a stack of drain regions of the stack of transistors; and a gate stack that forms gate regions for the stack of transistors, wherein the gate stack comprises traces of a first polymer of a block copolymer, the block copolymer comprising the first polymer and a second polymer.