公开(公告)号：US20210202380A1

公开(公告)日：2021-07-01

申请号：US17200700

申请日：2021-03-12

Applicant: Intel Corporation

Inventor： Jiun Hann SIR ,  Poh Boon KHOO ,  Eng Huat GOH ,  Amruthavalli Pallavi ALUR ,  Debendra MALLIK

IPC: H01L23/522 ,  H01L23/00

Abstract: An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.