公开(公告)号：US20180108727A1

公开(公告)日：2018-04-19

申请号：US15667333

申请日：2017-08-02

申请人： INTEL CORPORATION

发明人： Chen-Guan LEE ,  Walid HAFEZ ,  Chia-Hong JAN

IPC分类号： H01L49/02 ,  H01L27/06 ,  H01L23/66 ,  H01L21/8234

CPC分类号： H01L28/20 ,  H01L21/8234 ,  H01L23/66 ,  H01L27/0629 ,  H01L27/0738 ,  H01L28/24 ,  H01L29/785

摘要： Integrated circuit structures including a pillar resistor disposed over a surface of a substrate, and fabrication techniques to form such a resistor in conjunction with fabrication of a transistor over the substrate. Following embodiments herein, a small resistor footprint may be achieved by orienting the resistive length orthogonally to the substrate surface. In embodiments, the vertical resistor pillar is disposed over a first end of a conductive trace, a first resistor contact is further disposed on the pillar, and a second resistor contact is disposed over a second end of a conductive trace to render the resistor footprint substantially independent of the resistance value.Formation of a resistor pillar may be integrated with a replacement gate transistor process by concurrently forming the resistor pillar and sacrificial gate out of a same material, such as polysilicon. Pillar resistor contacts may also be concurrently formed with one or more transistor contacts.