公开(公告)号：US20220189556A1

公开(公告)日：2022-06-16

申请号：US17399548

申请日：2021-08-11

Applicant: Kioxia Corporation

Inventor： Kazutaka IKEGAMI ,  Hidehiro SHIGA

IPC: G11C16/10 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11582 ,  G11C16/04

Abstract: A semiconductor storage device includes a first word line, a second word line provided in the same layer with the first word line and configured to be controlled independently from the first word line, a plurality of memory pillars between the first word line and the second word line, each of the plurality of memory pillars including a first memory cell facing to the first word line and a second memory cell facing to the second word line, the plurality of memory pillars being arranged in a first direction and a second direction intersecting to the first direction and a control circuit. The control circuit is configured to perform a write operation to the second memory cell included in the plurality of memory pillars after performing a write operation to the first memory cell included in each of the plurality of memory pillars.