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    Methods for performing plasma etching operations on microelectronic structures
    12.
    发明授权
    Methods for performing plasma etching operations on microelectronic structures 失效
    在微电子结构上执行等离子体蚀刻操作的方法

    公开(公告)号：US5900163A

    公开(公告)日：1999-05-04

    申请号：US784958

    申请日：1997-01-16

    申请人： Whi-kun Yi ,  Dai-sik Moon ,  Sung-kyeong Kim ,  Kyung-hoon Kim ,  Gyu-hwan Kwag

    发明人： Whi-kun Yi ,  Dai-sik Moon ,  Sung-kyeong Kim ,  Kyung-hoon Kim ,  Gyu-hwan Kwag

    IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  B44C1/22

    CPC分类号： H01L21/32137

    摘要： A method for etching a layer of a microelectronic structure includes the steps of masking the layer to be etched so that predetermined portions of the layer are exposed, and providing an etching gas. An additional gas is also provided wherein the additional gas generates a compound having a carbene structure when exposed to a plasma discharge. A plasma of the etching gas and the additional gas is generated to thereby etch the exposed portions of the layer and to form the compound having a carbene structure. A polymer can thus be formed from the compound having the carbene structure on the sidewalls of the etched portions of the layer. Accordingly, the profile of the etched layer can be improved.

    摘要翻译： 用于蚀刻微电子结构层的方法包括以下步骤：掩蔽待蚀刻的层，使得层的预定部分暴露，并提供蚀刻气体。 还提供另外的气体，其中附加气体当暴露于等离子体放电时产生具有卡宾结构的化合物。 产生蚀刻气体和附加气体的等离子体，从而蚀刻该层的暴露部分并形成具有卡宾结构的化合物。 因此，可以在层的蚀刻部分的侧壁上由具有卡宾结构的化合物形成聚合物。 因此，可以提高蚀刻层的轮廓。

    THIN FILM TRANSISTOR SUBSTRATE AND LIQUID CRYSTAL DISPLAY DEVICE HAVING THE SAME
    13.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND LIQUID CRYSTAL DISPLAY DEVICE HAVING THE SAME 有权
    薄膜晶体管基板和具有该薄膜晶体管的液晶显示器件

    公开(公告)号：US20080198319A1

    公开(公告)日：2008-08-21

    申请号：US12018576

    申请日：2008-01-23

    申请人： Kyung-hoon Kim ,  Keun-woo Park ,  Kook-chul Moon ,  Pil-mo Choi ,  Chul-ho Kim ,  Ho-suk Maeng ,  Sang-hoon Lee

    发明人： Kyung-hoon Kim ,  Keun-woo Park ,  Kook-chul Moon ,  Pil-mo Choi ,  Chul-ho Kim ,  Ho-suk Maeng ,  Sang-hoon Lee

    IPC分类号： G02F1/1343

    CPC分类号： G02F1/13454 ,  G02F1/136213

    摘要： A liquid crystal display device with a display region and a non-display region surrounding the display region, the liquid crystal display device comprising: a first substrate; a second substrate which faces the first substrate; and a liquid crystal layer which is interposed between the first substrate and the second substrate, the first substrate comprising: a first insulating substrate; gate and data lines which are formed on the first insulating substrate and intersecting each other; a pixel thin film transistor formed on the display region and electrically connected to the gate and data lines; a pixel electrode electrically connected to the pixel thin film transistor; a gate driver formed on the non-display region and connected to the gate line to drive the gate line; and a direct current (DC)/DC converter formed on the non-display region and comprises a converter thin film transistor and a capacitance part; the capacitance part includes: a first capacitance part which comprises a first electrode, a first dielectric layer formed on the first electrode, and a second electrode formed on the first dielectric layer; and a second capacitance part which comprises the second electrode, a second dielectric layer formed on the second electrode, and a third electrode formed on the second dielectric layer.

    摘要翻译： 一种具有显示区域和围绕显示区域的非显示区域的液晶显示装置，所述液晶显示装置包括：第一基板; 面向所述第一基板的第二基板; 以及介于所述第一基板和所述第二基板之间的液晶层，所述第一基板包括：第一绝缘基板; 栅极和数据线，其形成在第一绝缘基板上并彼此交叉; 形成在所述显示区域上并电连接到所述栅极和数据线的像素薄膜晶体管; 与像素薄膜晶体管电连接的像素电极; 栅极驱动器，形成在非显示区域上并连接到栅极线以驱动栅极线; 以及形成在所述非显示区域上并包括转换器薄膜晶体管和电容部分的直流（DC）/ DC转换器; 电容部包括：第一电容部，其包括第一电极，形成在第一电极上的第一电介质层和形成在第一电介质层上的第二电极; 以及第二电容部，其包括所述第二电极，形成在所述第二电极上的第二电介质层和形成在所述第二电介质层上的第三电极。