公开(公告)号：US20230134901A1

公开(公告)日：2023-05-04

申请号：US17969499

申请日：2022-10-19

Applicant: LG Display Co., Ltd.

Inventor： Younghyun Ko ,  Jaeman Jang ,  SeungChan Choi ,  Min-Gu Kang ,  Sungju Choi

IPC: H01L27/32

Abstract: A thin film transistor and a display device comprising the same is disclosed. The thin film transistor comprises an active layer on a substrate, and a first gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion, and an effective gate voltage applied to a first area of the channel portion, which is in contact with the first connection portion, is greater than that applied to a second area of the channel portion, which is in contact with the second connection portion.