公开(公告)号：US20230134901A1

公开(公告)日：2023-05-04

申请号：US17969499

申请日：2022-10-19

Applicant: LG Display Co., Ltd.

Inventor： Younghyun Ko ,  Jaeman Jang ,  SeungChan Choi ,  Min-Gu Kang ,  Sungju Choi

IPC: H01L27/32

Abstract: A thin film transistor and a display device comprising the same is disclosed. The thin film transistor comprises an active layer on a substrate, and a first gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion, and an effective gate voltage applied to a first area of the channel portion, which is in contact with the first connection portion, is greater than that applied to a second area of the channel portion, which is in contact with the second connection portion.

公开(公告)号：US20240222523A1

公开(公告)日：2024-07-04

申请号：US18491514

申请日：2023-10-20

Applicant: LG Display Co., Ltd.

Inventor： Hyeonjoo Seul ,  Jinwon Jung ,  Sungju Choi ,  Jaeyoon Park

IPC: H01L29/786 ,  H01L29/66 ,  H10K59/121

CPC classification number: H01L29/78696 ,  H01L29/6675 ,  H01L29/7869 ,  H10K59/1213

Abstract: A thin film transistor including an active layer including a channel, a first connection portion and a second connection portion contacting opposite sides of the channel; and a gate electrode overlapping the channel of the active layer. Further, the active layer includes a first active layer; a second active layer on the first active layer in the first connection portion and the second connection portion of the active layer; and a third active layer contacting the first active layer in the channel and contacting the second active layer in the first connection portion and the second connection portion.

公开(公告)号：US20240213375A1

公开(公告)日：2024-06-27

申请号：US18457520

申请日：2023-08-29

Applicant: LG Display Co., Ltd.

Inventor： Sungju Choi ,  Hyeonjoo Seul ,  Jinwon Jung ,  Jaeyoon Park

IPC: H01L29/786

CPC classification number: H01L29/78696 ,  H01L29/7869

Abstract: A thin film transistor including an active layer; and a gate electrode at least partially overlapped with the active layer. Further, the active layer includes a first active layer and a second active layer on the first active layer; a channel; a first connection portion contacting a first side of the channel; and a second connection portion contacting a second side of the channel. In addition, the channel includes a first overlap area in which the first active layer and the second active layer overlap each other based on a plan view; and a first non-overlap area in which the first active layer and the second active layer do not overlap each other based on the plan view. Also, in the channel of the active layer, each of the first active layer and the second active layer extends from the first connection portion to the second connection portion. The second active layer also has a mobility greater than a mobility of the first active layer.