公开(公告)号：US20200105959A1

公开(公告)日：2020-04-02

申请号：US16699858

申请日：2019-12-02

Applicant: LightSpin Technologies Inc.

Inventor： Eric Harmon

IPC: H01L31/107 ,  H01L27/14 ,  H01L27/142 ,  H01L27/146 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/02

Abstract: This disclosure is directed to devices and systems and methods comprising virtual negative beveled facets including to isolate adjacent devices from one another. Aspects hereof are directed to integrated photon detectors or photodetector devices incorporating implant isolation mesas and resistors, and in particular to methods and structures for isolating such detectors or devices from neighboring detectors or devices.

公开(公告)号：US20160329369A1

公开(公告)日：2016-11-10

申请号：US14705270

申请日：2015-05-06

Applicant: LightSpin Technologies, Inc.

Inventor： Eric Harmon

IPC: H01L27/146

CPC classification number: H01L27/1446 ,  H01L31/00 ,  H01L31/107

Abstract: A photodetector includes an array of pixels, each pixel comprising a defined doped region defined in a doped semiconductor layer. The defined doped region is defined by selected regions of ion implants to provide resistive isolation between each defined doped region. A capacitor is formed by the defined doped region and a metal layer disposed above the doped semiconductor layer. A contact metal line is disposed above the doped semiconductor layer. The capacitor metal and contact metal lines are electrically coupled together and are in electrical communication with the output of the photodetector array.

Abstract translation: 光电检测器包括像素阵列，每个像素包括限定在掺杂半导体层中的限定的掺杂区域。 限定的掺杂区域由离子植入物的选定区域限定，以在每个限定的掺杂区域之间提供电阻隔离。 电容器由限定的掺杂区域和设置在掺杂半导体层上方的金属层形成。 接触金属线设置在掺杂半导体层上方。 电容器金属和接触金属线电耦合在一起并且与光电检测器阵列的输出电连通。