Method And System For A Low-Voltage Integrated Silicon High-Speed Modulator
    11.
    发明申请
    Method And System For A Low-Voltage Integrated Silicon High-Speed Modulator 有权
    低压集成硅高速调制器的方法与系统

    公开(公告)号:US20140286647A1

    公开(公告)日:2014-09-25

    申请号:US14217743

    申请日:2014-03-18

    Applicant: Luxtera, Inc.

    Abstract: Methods and systems for a low-voltage integrated silicon high-speed modulator may include an optical modulator comprising first and second optical waveguides and two optical phase shifters, where each of the two optical phase shifters may comprise a p-n junction with a horizontal section and a vertical section and an optical signal is communicated to the first optical waveguide. A portion of the optical signal may then be coupled to the second optical waveguide. A phase of at least one optical signal in the waveguides may be modulated utilizing the optical phase shifters. A portion of the phase modulated optical signals may be coupled between the two waveguides, thereby generating two output signals from the modulator. A modulating signal may be applied to the phase shifters which may include a reverse bias.

    Abstract translation: 用于低电压集成硅高速调制器的方法和系统可以包括包括第一和第二光波导和两个光学移相器的光调制器,其中两个光学移相器中的每一个可以包括具有水平截面的pn结和 垂直截面和光信号被传送到第一光波导。 然后光信号的一部分可以耦合到第二光波导。 可以使用光学移相器来调制波导中的至少一个光信号的相位。 相位调制光信号的一部分可以耦合在两个波导之间,由此产生来自调制器的两个输出信号。 调制信号可以被施加到可以包括反向偏置的移相器。

    Method and system for a silicon-based optical phase modulator with high modal overlap

    公开(公告)号:US10361790B2

    公开(公告)日:2019-07-23

    申请号:US16036447

    申请日:2018-07-16

    Applicant: Luxtera, Inc.

    Abstract: Methods and systems for a silicon-based optical phase modulator with high modal overlap are disclosed and may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.

    Method and system for a low-voltage integrated silicon high-speed modulator

    公开(公告)号:US10048518B2

    公开(公告)日:2018-08-14

    申请号:US15402400

    申请日:2017-01-10

    Applicant: Luxtera, Inc.

    Abstract: Methods and systems for a low-voltage integrated silicon high-speed modulator may include an optical modulator comprising first and second optical waveguides and two optical phase shifters, where each of the two optical phase shifters may comprise a p-n junction with a horizontal section and a vertical section and an optical signal is communicated to the first optical waveguide. A portion of the optical signal may then be coupled to the second optical waveguide. A phase of at least one optical signal in the waveguides may be modulated utilizing the optical phase shifters. A portion of the phase modulated optical signals may be coupled between the two waveguides, thereby generating two output signals from the modulator. A modulating signal may be applied to the phase shifters which may include a reverse bias.

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