公开(公告)号：US20180301407A1

公开(公告)日：2018-10-18

申请号：US15486345

申请日：2017-04-13

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Teng-Hao Yeh ,  Min-Feng Hung ,  Chih-Wei Hu

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: A three-dimensional (3D) semiconductor device is provided, comprising: a substrate having a first area and a second area, and the second area adjacent to and surrounding the first area (i.e. active area), wherein an array pattern is formed in the first area; a stack structure having multi-layers formed above the substrate, and the multi-layers comprising active layers (ex: conductive layers) alternating with insulating layers above the substrate. The stack structure comprises first sub-stacks related to the array pattern in the first area; and second sub-stacks separately disposed in the second area, and the second sub-stacks configured as first dummy islands surrounding the first sub-stacks of the array pattern.