公开(公告)号：US10665272B2

公开(公告)日：2020-05-26

申请号：US16270495

申请日：2019-02-07

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jaekwan Park

IPC: G11C5/14 ,  G11C7/06 ,  G11C7/14 ,  G11C7/08 ,  G11C7/12 ,  G11C16/24 ,  G11C16/26 ,  G11C7/22

Abstract: Apparatuses and methods for compensating for source voltage are described. An example apparatus includes a source coupled to a memory cell and a read-write circuit coupled to the memory cell. The apparatus further includes a sense current generator coupled to a node of the source and to the read-write circuit, the sense current generator configured to control provision of a sense current by the read-write circuit responsive to a voltage of the node of the source.