公开(公告)号：US20210408301A1

公开(公告)日：2021-12-30

申请号：US17369007

申请日：2021-07-07

Applicant: Mosaid Technologies Incorporated

Inventor： Hyoung Seub Rhie

IPC: H01L29/792 ,  H01L29/66 ,  G11C16/04 ,  H01L27/11573 ,  H01L27/11582 ,  G11C11/56

Abstract: Disclosed is a method of manufacturing flash memory with a vertical cell stack structure. The method includes forming source lines in a cell area of a substrate having an ion-implanted well and forming an alignment mark relative to the source lines. The alignment mark is formed in the substrate outside the cell area of the substrate. After formation of the source lines, cell stacking layers are formed. After forming the cell stacking layers, cell pillars in the cell stacking layers are formed at locations relative to the previously formed source lines using the alignment mark to correctly locate the cell pillars.

公开(公告)号：US20140151774A1

公开(公告)日：2014-06-05

申请号：US13803085

申请日：2013-03-14

Applicant: MOSAID TECHNOLOGIES INCORPORATED

Inventor： Hyoung Seub Rhie

IPC: H01L29/792 ,  H01L29/66

Abstract: Disclosed is a method of manufacturing flash memory with a vertical cell stack structure. The method includes forming source lines in a cell area of a substrate having an ion-implanted well and forming an alignment mark relative to the source lines. The alignment mark is formed in the substrate outside the cell area of the substrate. After formation of the source lines, cell stacking layers are formed. After forming the cell stacking layers, cell pillars in the cell stacking layers are formed at locations relative to the previously formed source lines using the alignment mark to correctly locate the cell pillars.

Abstract translation: 公开了一种制造具有垂直单元堆栈结构的闪速存储器的方法。 该方法包括在具有离子注入阱的衬底的单元区域中形成源极线，并相对于源极线形成对准标记。 对准标记形成在基板的单元区域外的基板中。 在形成源极线之后，形成电池层叠层。 在形成电池堆叠层之后，使用对准标记在相对于先前形成的源极线的位置处形成电池堆叠层中的电池柱，以正确地定位电池柱。