公开(公告)号：US20130134499A1

公开(公告)日：2013-05-30

申请号：US13469867

申请日：2012-05-11

申请人： Kosuke TATSUMURA ,  Kiwamu Sakuma ,  Koichiro Zaitsu ,  Mari Matsumoto

发明人： Kosuke TATSUMURA ,  Kiwamu Sakuma ,  Koichiro Zaitsu ,  Mari Matsumoto

IPC分类号： H01L29/792

CPC分类号： H01L29/792 ,  G11C16/0441 ,  H01L27/11568 ,  H01L29/66833

摘要： A nonvolatile programmable switch according to an embodiment includes: a first nonvolatile memory transistor including a first to third terminals connected to a first to third interconnects respectively; a second nonvolatile memory transistor including a fourth terminal connected to a fourth interconnect, a fifth terminal connected to the second interconnect, and a sixth terminal connected to the third interconnect, the first and second nonvolatile memory transistors having the same conductivity type; and a pass transistor having a gate electrode connected to the second interconnect. When the first and fourth interconnects are connected to a first power supply while the third interconnect is connected to a second power supply having a higher voltage than that of the first power supply, a threshold voltage of the first nonvolatile memory transistor increases, and a threshold voltage of the second nonvolatile memory transistor decreases.

摘要翻译： 根据实施例的非易失性可编程开关包括：第一非易失性存储晶体管，包括分别连接到第一至第三互连的第一至第三端子; 第二非易失性存储晶体管，包括连接到第四互连的第四端子，连接到第二互连的第五端子和连接到第三互连件的第六端子，具有相同导电类型的第一和第二非易失性存储器晶体管; 以及具有连接到第二互连的栅电极的传输晶体管。 当第一和第四互连连接到第一电源，而第三互连连接到具有比第一电源的电压更高的电压的第二电源时，第一非易失性存储晶体管的阈值电压增加，阈值 第二非易失性存储晶体管的电压降低。