Substrate treatment apparatus, substrate holding device, and semiconductor device manufacturing method
    11.
    发明申请
    Substrate treatment apparatus, substrate holding device, and semiconductor device manufacturing method 有权
    基板处理装置,基板保持装置以及半导体装置的制造方法

    公开(公告)号:US20070007646A1

    公开(公告)日:2007-01-11

    申请号:US10574568

    申请日:2004-11-29

    IPC分类号: H01L23/34

    摘要: A nonuniform portion of a film thickness on a substrate owing to effects of a support column, a substrate mounting portion, and the like which constitute a substrate holder is eliminated, and uniformity of the film thickness of the substrate is enhanced. A substrate processing apparatus houses plural wafers (substrates) held on a boat (substrate holder) in a processing chamber, supplying processing gas to the heated processing chamber, thereby performing film-forming processing for the wafers. The boat includes: at least three support columns 15 provided substantially vertically; plural wafer support portions 16 (substrate mounting portions) which are provided at multi-stages on the support columns and mount the plural wafers substantially horizontally at a predetermined interval; and plural ring-like plates 13 arranged on the support columns 15, and provided substantially horizontally at a predetermined interval with respect to the wafers supported on the wafer support portions 16.

    摘要翻译: 消除了由于构成衬底保持器的支撑柱,衬底安装部等的影响而在衬底上的不均匀部分的膜厚度,并且提高了衬底的膜厚度的均匀性。 基板处理装置容纳保持在处理室中的船(基板支架)上的多个晶片(基板),将加工气体供给到加热处理室,从而对晶片进行成膜处理。 该船包括:至少三个基本垂直地设置的支撑柱15; 多个晶片支撑部分16(基板安装部分),其设置在支撑柱上的多级并且以预定间隔基本水平地安装多个晶片; 和布置在支撑柱15上的多个环状板13,并相对于支撑在晶片支撑部分16上的晶片以预定的间隔大致水平地设置。