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1.发明公开公开(公告)号：US20240360590A1
公开(公告)日：2024-10-31
申请号：US18140508
申请日：2023-04-27
IPC分类号： C30B25/14 , C23C16/44 , C23C16/458 , C30B25/10 , C30B25/12
CPC分类号： C30B25/14 , C23C16/4412 , C23C16/4583 , C30B25/10 , C30B25/12
摘要： Embodiments of the present disclosure relate to gas exhaust frames including pathways having size variations, for use in a substrate processing chamber, and related apparatus and methods. In one or more embodiments, a processing chamber includes a chamber body, and a window. The processing chamber includes one or more heat sources, a substrate support, a liner, and a pre-heat ring. The processing chamber includes one or more gas inlets, and a first set of exhaust pathways positioned on a first side of a reference plane. The first set of exhaust pathways have a first cross-sectional area gradient that increases along a first direction. The processing chamber includes a second set of exhaust pathways positioned on a second side of the reference plane. The second set of exhaust pathways have a second cross-sectional area gradient that increases along a second direction that is opposite of the first direction.
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2.发明公开公开(公告)号：US20240360551A1
公开(公告)日：2024-10-31
申请号：US18141073
申请日：2023-04-28
发明人： Sheng-chun Yang , Yi-Ming Lin , Chun Chang , Che Kang Liu , Kaijun Jan , Xuan-Yang Zheng , Tzu-Chuan Chao , Weigang Wu , Chih-Yuan Wang , Ren-Jyue Wang
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/52
CPC分类号： C23C16/4412 , C23C16/45561 , C23C16/4583 , C23C16/52
摘要： A semiconductor processing tool includes: a process chamber into which a semiconductor wafer is loaded; a support for securing the wafer loaded into the chamber tool; an inlet which introduces a first gas into the chamber for processing the wafer; and an exhaust system that exhausts gas from the chamber. The exhaust system includes: a first line coupled to the chamber to exhaust gas from the chamber; and a pump to draw gas through the first line from the chamber. The tool further includes a heating module having: a second line coupled to the first and a supply of a second gas, the second gas being flowed through the second line from the supply into the first line; and a heating element contained in the second line, the heating element heating the second gas in the second line before the second gas is flowed into the first line.
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公开(公告)号：US20240332535A1
公开(公告)日：2024-10-03
申请号：US18580131
申请日：2022-08-19
发明人： Weizhen WANG , Yanlong BAI , Zhefeng LI , Ann Lincu XIN , Lu SHEN , Luoyuan XIE
IPC分类号： H01M4/62 , C01B25/45 , C01B33/20 , C01G49/00 , C01G51/00 , C01G53/00 , C23C14/08 , C23C14/35 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/458 , H01M4/02 , H01M4/04 , H01M4/133 , H01M4/1393 , H01M4/587 , H01M10/0525
CPC分类号： H01M4/628 , C01B25/45 , C01B33/20 , C01G49/0045 , C01G51/006 , C01G51/40 , C01G53/40 , C23C14/081 , C23C14/35 , C23C16/402 , C23C16/403 , C23C16/405 , C23C16/406 , C23C16/408 , C23C16/4408 , C23C16/45527 , C23C16/45555 , C23C16/4583 , H01M4/0426 , H01M4/0428 , H01M4/133 , H01M4/1393 , H01M4/587 , H01M10/0525 , C01P2006/40 , H01M2004/027
摘要： Disclosed are a passivation layer (200), a preparation method therefor and an application thereof. The passivation layer (200) comprises a first passivation layer (210), the first passivation layer (210) being disposed adjacent to a secondary battery negative electrode plate (100) and having ionic conductivity and a thickness of 0.1-10 nm. The passivation layer (200) also comprises a second passivation layer (220), the second passivation layer (210) being disposed at a side surface of the first passivation layer (210) distant from the negative electrode plate (100) of the secondary battery, comprising a corrosion-resistant material and having a thickness of 0.1-5 nm. The passivation layer (200) has the effect of increasing safety performance and cycle performance of a secondary battery. The preparation method is simple and has high applicability. Furthermore, the obtained passivation layer (200) can be applied in multiple types of batteries and multiple fields.
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公开(公告)号：US12087573B2
公开(公告)日：2024-09-10
申请号：US17597593
申请日：2020-07-09
发明人： Gerald Joseph Brady , Kevin M. McLaughlin , Pratik Sankhe , Bart J. van Schravendijk , Shriram Vasant Bapat
IPC分类号： H01L21/02 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/52 , H10N50/01
CPC分类号： H01L21/02244 , C23C16/4408 , C23C16/45502 , C23C16/45527 , C23C16/45565 , C23C16/4583 , C23C16/52 , H10N50/01
摘要： Methods and apparatuses are provided herein for oxidizing an annular edge region of a substrate. A method may include providing the substrate to a substrate holder in a semiconductor processing chamber, the semiconductor processing chamber having a showerbead positioned above the substrate holder, and simultaneously flowing, while the substrate is supported by the substrate holder, (a) an oxidizing gas around a periphery of the substrate and (b) an inert gas that does not include oxygen through the showerhead and onto the substrate, thereby creating an annular gas region over an annular edge region of the substrate and an interior gas region over on an interior region of the substrate; the simultaneous flowing is not during a deposition of a material onto the substrate, and the annular gas region has an oxidization rate higher than the interior gas region.
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公开(公告)号：US20240295025A1
公开(公告)日：2024-09-05
申请号：US17754853
申请日：2020-10-13
IPC分类号： C23C16/455 , C23C16/458
CPC分类号： C23C16/45565 , C23C16/4583
摘要： A dual-plenum fractal (DPF) showerhead for distributing different semiconductor processing gases across a semiconductor wafer during processing operations is provided. The DPF showerhead may have a plurality of layers, each featuring a pattern of gas distribution features, with the gas distribution features on each layer generally being similar in shape to the gas distribution features on the layer immediately upstream therefrom but smaller in size. Such a “fractal”-like structure to the gas flow passages provides very uniform processing gas delivery across the surface of a semiconductor wafer during processing operations, thereby enhancing wafer uniformity.
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6.发明授权公开(公告)号：US12077880B2
公开(公告)日：2024-09-03
申请号：US17243158
申请日：2021-04-28
发明人： Zhepeng Cong , Nyi Oo Myo , Tao Sheng , Yong Zheng
IPC分类号： C30B25/16 , C23C14/50 , C23C14/54 , C23C16/458 , C23C16/46 , C23C16/52 , C30B23/00 , C30B23/06 , C30B25/10 , C30B25/12 , G01N21/55 , B41J2/16 , G01B11/06 , H01L21/02 , H01L21/66 , H01L21/67
CPC分类号： C30B25/16 , C23C14/50 , C23C14/541 , C23C14/547 , C23C16/4583 , C23C16/46 , C23C16/52 , C30B23/002 , C30B23/063 , C30B25/10 , C30B25/12 , G01N21/55 , B01J2219/00443 , B41J2/1642 , G01B11/0625 , G01N2201/062 , H01L21/02266 , H01L21/02271 , H01L21/67253 , H01L22/12 , H01L22/26
摘要： Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.
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公开(公告)号：US12074052B2
公开(公告)日：2024-08-27
申请号：US18206931
申请日：2023-06-07
IPC分类号： H01L21/683 , C23C16/02 , C23C16/30 , C23C16/458
CPC分类号： H01L21/6833 , C23C16/0227 , C23C16/308 , C23C16/4583
摘要： A body of an electrostatic chuck comprises mesas disposed on a polished surface of the body. Each of the mesas comprises an adhesion layer disposed on the polished surface of the body, a transition layer disposed over the adhesion layer, and a coating layer disposed over the transition layer. The coating layer has a hardness of at least 14 GPa. The body further comprises a sidewall coating disposed over a sidewall of the body. A method for preparing the body comprises polishing the surface of the body and cleaning the polished surface. The method further comprises depositing the mesas by depositing the adhesion layer on the body, the transition layer over the adhesion layer, and the coating layer over the transition layer. Further, the method includes, polishing the mesas.
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公开(公告)号：US12074049B2
公开(公告)日：2024-08-27
申请号：US16452462
申请日：2019-06-25
发明人： Eric A. Pape
IPC分类号： H01L21/683 , C23C16/44 , C23C16/455 , C23C16/458 , H01J37/32 , H01L21/687
CPC分类号： H01L21/6833 , C23C16/4404 , C23C16/4409 , C23C16/45544 , C23C16/4583 , H01J37/32082 , H01J37/32477 , H01J37/32513 , H01J37/32715 , H01L21/6831 , H01L21/68735 , H01L21/68757 , H01L21/68785 , H01J2237/334
摘要： A substrate support for a substrate processing chamber includes a baseplate, a ceramic layer bonded to the baseplate, and a seal provided in an outer perimeter of an interface between the ceramic layer and the baseplate. The seal is arranged to seal the interface from the substrate processing chamber and includes an adhesive comprising a first material arranged in the outer perimeter of the interface between the ceramic layer and the baseplate and a ring arranged in the outer perimeter of the interface between the ceramic layer and the baseplate. The ring is removable and comprises a second material having a greater resistance to plasma erosion than the first material.
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公开(公告)号：US20240274448A1
公开(公告)日：2024-08-15
申请号：US18108432
申请日：2023-02-10
发明人： Zhepeng CONG , Masato ISHII , Ernesto J. ULLOA , Shu-Kwan LAU , Bharath Bopanna PUTTICHANDA , Ashur J. ATANOS , Andrew KRETZSCHMAR
IPC分类号： H01L21/67 , C23C16/458 , C23C16/46 , C23C16/52 , C30B25/10 , C30B25/12 , H01L21/677 , H01L21/687
CPC分类号： H01L21/67196 , C23C16/4583 , C23C16/46 , C23C16/52 , C30B25/10 , C30B25/12 , H01L21/67742 , H01L21/67745 , H01L21/68707 , H01L21/67167
摘要： The present disclosure relates to transfer chambers, systems, and related components and methods, for pre-heating and pre-cooling substrate transfer apparatus. In one or more embodiments, the transfer apparatus are pre-heated and pre-cooled in relation to transferring substrates for substrate processing operations as part of semiconductor manufacturing. In one or more embodiments, a transfer chamber applicable for use in semiconductor manufacturing includes an internal volume, one or more sidewalls at least partially defining the internal volume, and a transfer apparatus disposed in the internal volume. The transfer apparatus includes one or more links, one or more motors configured to pivot the one or more links, and one or more substrate holders coupled to the one or more links. The transfer chamber includes a window that includes a transparent material, and one or more heat sources configured to direct heat into the internal volume through the window.
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公开(公告)号：US20240263306A1
公开(公告)日：2024-08-08
申请号：US18565703
申请日：2022-05-25
发明人： Shuji AZUMO , Sena FUJITA , Tadashi MITSUNARI , Yumiko KAWANO , Shinichi IKE
IPC分类号： C23C16/455 , C23C16/04 , C23C16/458 , C23C16/54 , C23C16/56
CPC分类号： C23C16/45527 , C23C16/045 , C23C16/45563 , C23C16/4583 , C23C16/54 , C23C16/56
摘要： A film forming method includes: (A) preparing a substrate with a surface having a first region where a first film is exposed, and a second region where a second film formed by a material different from the first film is exposed; (B) forming a stepped portion in the surface such that the first region becomes higher than the second region; (C) supplying a liquid to the surface where the stepped portion is formed; and (D) supplying, to the surface, a processing gas that chemically changes the liquid, and moving the liquid from the second region to the first region by a reaction between the processing gas and the liquid to selectively form a film in the first region with respect to the second region.
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