公开(公告)号：US20100112822A1

公开(公告)日：2010-05-06

申请号：US12564594

申请日：2009-09-22

申请人： Kenichiro Toratani ,  Takashi Nakao ,  Ichiro Mizushima

发明人： Kenichiro Toratani ,  Takashi Nakao ,  Ichiro Mizushima

IPC分类号： H01L21/465

CPC分类号： C23C16/0272 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/4405 ,  Y10S438/905

摘要： In a manufacturing process of a semiconductor device by forming a structure film on a substrate in a reaction chamber of a manufacturing apparatus, cleaning inside the reaction chamber is performed. That is, a precoat film made of a silicon nitride film containing boron is deposited on an inner wall of the reaction chamber, a silicon nitride film not containing boron is formed as the structure film on the substrate in the reaction chamber, and the inner wall of the reaction chamber is dry etched to be cleaned. At this time, the dry etching is terminated after boron is detected in a gas exhausted from the reaction chamber.

摘要翻译： 在通过在制造装置的反应室中的基板上形成结构膜的半导体装置的制造工序中，进行反应室内的清洗。 也就是说，在反应室的内壁上沉积由含硼的氮化硅膜制成的预涂膜，在反应室中的基板上形成不含硼的氮化硅膜作为结构膜，内壁 的反应室被干蚀刻以进行清洁。 此时，在从反应室排出的气体中检测到硼后，干法蚀刻终止。

公开(公告)号：US08193056B2

公开(公告)日：2012-06-05

申请号：US12878320

申请日：2010-09-09

申请人： Kazuaki Iwasawa ,  Shogo Matsuo ,  Kenichiro Toratani

发明人： Kazuaki Iwasawa ,  Shogo Matsuo ,  Kenichiro Toratani

IPC分类号： H01L21/8247

CPC分类号： H01L21/823481 ,  H01L21/28273 ,  H01L21/76224 ,  H01L27/11521 ,  H01L29/512 ,  H01L29/7881

摘要： According to one embodiment, a method of fabricating a semiconductor device is disclosed. The method includes the steps of: forming a tunnel insulating film on a semiconductor substrate; forming a floating gate electrode on the tunnel insulating film; and forming a silicon nitride film including a low-density silicon nitride film and a high-density silicon nitride film on the floating gate electrode. The method also includes the steps of: forming an isolation trench thereby to expose the low-density silicon nitride film exposed at least in a portion of a side surface of the isolation trench; forming an isolating insulating film covering an internal surface of the isolation trench; removing the silicon nitride film; and forming an interelectrode insulating film and a control gate electrode both covering the floating gate electrode and the isolating insulating film.

摘要翻译： 根据一个实施例，公开了制造半导体器件的方法。 该方法包括以下步骤：在半导体衬底上形成隧道绝缘膜; 在隧道绝缘膜上形成浮栅; 以及在所述浮栅电极上形成包括低密度氮化硅膜和高密度氮化硅膜的氮化硅膜。 该方法还包括以下步骤：形成隔离沟槽，从而暴露至少在隔离沟槽的侧表面的一部分中暴露的低密度氮化硅膜; 形成覆盖所述隔离沟槽的内表面的隔离绝缘膜; 去除氮化硅膜; 以及形成电极间绝缘膜和覆盖浮栅电极和隔离绝缘膜的控制栅电极。

公开(公告)号：US08071483B2

公开(公告)日：2011-12-06

申请号：US12564594

申请日：2009-09-22

申请人： Kenichiro Toratani ,  Takashi Nakao ,  Ichiro Mizushima

发明人： Kenichiro Toratani ,  Takashi Nakao ,  Ichiro Mizushima

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C23C16/0272 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/4405 ,  Y10S438/905

摘要： In a manufacturing process of a semiconductor device by forming a structure film on a substrate in a reaction chamber of a manufacturing apparatus, cleaning inside the reaction chamber is performed. That is, a precoat film made of a silicon nitride film containing boron is deposited on an inner wall of the reaction chamber, a silicon nitride film not containing boron is formed as the structure film on the substrate in the reaction chamber, and the inner wall of the reaction chamber is dry etched to be cleaned. At this time, the dry etching is terminated after boron is detected in a gas exhausted from the reaction chamber.

摘要翻译： 在通过在制造装置的反应室中的基板上形成结构膜的半导体装置的制造工序中，进行反应室内的清洗。 也就是说，在反应室的内壁上沉积由含硼的氮化硅膜制成的预涂膜，在反应室中的基板上形成不含硼的氮化硅膜作为结构膜，内壁 的反应室被干蚀刻以进行清洁。 此时，在从反应室排出的气体中检测到硼后，干法蚀刻终止。