Patent search cpc:"C23C16/0272" Page 1

1.

发明授权
Superconductor flux pinning without columnar defects 有权

公开(公告)号：US12120964B2

公开(公告)日：2024-10-15

申请号：US17282933

申请日：2019-10-10

Applicant: MetOxTechnologies, Inc.

Inventor： Mikhail Novozhilov , Alex Ignatiev

IPC: H10N60/01 , C23C16/02 , C23C16/40 , C23C16/48 , H10N60/20

CPC classification number: H10N60/0828 , C23C16/0272 , C23C16/404 , C23C16/405 , C23C16/408 , C23C16/482 , H10N60/0464 , H10N60/0632 , H10N60/203

Abstract: There is a superconducting article that includes a superconducting film comprising a substrate, one or more buffer layers, and a high temperature superconducting (HTS) layer. The superconducting layer may be comprised of the chemical composition REBa2Cu3O7−x, where RE is one or more rare earth elements, for example: Y, La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. The superconductor layer is produced using Photo-Assisted Metal Organic Chemical Vapor Deposition (PAMOCVD) and contains non-superconducting nanoparticles. The nanoparticles are substantially provided in the a-b plane and naturally oriented. The non-superconducting nanoparticles provide flux pinning centers that improve the critical current properties of the superconducting film.

2.

发明授权
Surfaces for contacting a hydrocarbon fluid and methods for preparing the same 有权

公开(公告)号：US12116678B2

公开(公告)日：2024-10-15

申请号：US18320437

申请日：2023-05-19

Applicant: General Electric Company

Inventor： Lawrence B. Kool , Alfred Albert Mancini , Bangalore Aswatha Nagaraj

IPC: C23F11/167 , C23C16/02 , C23C16/06 , C23C16/56 , F16L58/04 , F02C7/00

CPC classification number: C23F11/167 , C23C16/0272 , C23C16/06 , C23C16/56 , F02C7/00 , F16L58/04

Abstract: A component configured to be in contact with a hydrocarbon fluid and a method of preparing a contact surface of the component. The component may include a wall having the contact surface configured to be in contact with the hydrocarbon fluid. The contact surface is formed from a metal comprising a metal M, where M is selected from the group consisting of nickel (Ni), palladium (Pd), and platinum (Pt). A metal-ligand complex comprising phosphorus (P) is on the contact surface. The method of preparing a contact surface of the component may include treating the contact surface with a metal-ligand complex precursor comprising a phosphorus (P) ligand.

3.

发明公开
METHODS AND COMPOSITIONS FOR SURFACE FUNCTIONALIZATION OF OPTICAL SEMICONDUCTOR-INTEGRATED BIOCHIPS 审中-公开

公开(公告)号：US20240335832A1

公开(公告)日：2024-10-10

申请号：US18383385

申请日：2023-10-24

Applicant: InSilixa, Inc.

Inventor： Andrea Cuppoletti , Arjang Hassibi , Lei Pei , Yang Liu , Kshama Jirage , Arun Manickam

IPC: B01L3/00 , B01L7/00 , C07F7/08 , C23C16/02 , H01L27/146

CPC classification number: B01L3/502715 , B01L3/502707 , B01L3/502738 , B01L7/52 , C07F7/089 , C23C16/0272 , H01L27/14645 , B01L2200/0689 , B01L2300/0663 , B01L2300/0819 , B01L2300/0883 , B01L2400/06

Abstract: The present disclosure provides methods and compositions for surface functionalization of solid substrates. The compositions include functionalized silanes and nucleic acid constructs which may react to immobilize the nucleic acid constructs on the surface on the solid substrate. The disclosure also provides methods for immobilization of silanes and nucleic acid constructs on the surface of the substrate.

4.

发明授权
Substrate processing method 有权

公开(公告)号：US12100578B2

公开(公告)日：2024-09-24

申请号：US17557045

申请日：2021-12-21

Applicant: Tokyo Electron Limited

Inventor： Sho Kumakura , Yuta Nakane

IPC: C23C16/02 , B05D1/00 , C23C16/50 , C23C16/52 , H01J37/32 , H01L21/3065

CPC classification number: H01J37/32504 , B05D1/62 , C23C16/0272 , C23C16/50 , C23C16/52 , H01J37/32972 , H01J37/32082 , H01J2237/332 , H01L21/3065

Abstract: A substrate processing method includes forming a pre-coat film on an in-chamber part disposed in a chamber, and subsequently processing one or more substrates. The forming a pre-coat film includes forming a first film on the in-chamber part without using plasma or by using a first plasma generated under a condition that sputtering is suppressed on the in-chamber part, and forming a second film on a surface of the first film by using a second plasma.

5.

发明授权
Three-dimensional nano-patterns 有权

公开(公告)号：US12091745B2

公开(公告)日：2024-09-17

申请号：US17432931

申请日：2020-02-23

Applicant: TECHNION RESEARCH & DEVELOPMENT FOUNDATION LIMITED

Inventor： Tamar Segal-Peretz , Barun Kumar Barick , Rotem Azoulay

IPC: C23C16/04 , B82B3/00 , C23C16/02 , C23C16/455 , C23C16/56

CPC classification number: C23C16/04 , B82B3/0014 , C23C16/0272 , C23C16/45502 , C23C16/45527 , C23C16/56

Abstract: A method for making 3D nano-structure comprising at least two materials by spatially controlling the growth of the materials, is provided. Further, a method for making 3D nano-structure bound to a thermally labile substrate is provided. Composites, comprising a substrate bound to a 3D nano-structure, wherein the 3D nano-structure is arranged in a pattern are provided.

6.

发明公开
METHOD AND APPARATUS FOR EMBEDDING TUNGSTEN INTO RECESS FORMED ON SUBSTRATE 审中-公开

公开(公告)号：US20240295020A1

公开(公告)日：2024-09-05

申请号：US18584114

申请日：2024-02-22

Applicant: Tokyo Electron Limited

Inventor： Katsumasa YAMAGUCHI , Shigeru NAKAJIMA

IPC: C23C16/14 , C23C16/02 , C23C16/04 , C23C16/455 , C23C16/52

CPC classification number: C23C16/14 , C23C16/0272 , C23C16/045 , C23C16/45527 , C23C16/45553 , C23C16/52

Abstract: A method of embedding tungsten into a recess formed on a substrate, the method includes forming a lower tungsten layer by supplying a fluorine-free tungsten precursor gas containing a tungsten compound that does not contain fluorine atoms to a top surface of an aluminum oxide layer formed inside the recess, and embedding tungsten into the recess by supplying a tungsten precursor gas containing a tungsten compound that contains fluorine atoms to a top surface of the lower tungsten layer to form a main tungsten layer.

7.

发明公开
CUTTING TOOL 审中-公开

公开(公告)号：US20240227028A1

公开(公告)日：2024-07-11

申请号：US18559073

申请日：2022-05-06

Applicant: AB SANDVIK COROMANT

Inventor： Linus VON FIEANDT , Erik LINDAHL , Katalin BOOR

IPC: B23B27/14 , C23C16/02 , C23C16/30 , C23C16/34 , C23C16/36 , C23C16/40

CPC classification number: B23B27/148 , C23C16/0272 , C23C16/308 , C23C16/34 , C23C16/36 , C23C16/403 , B23B2228/105

Abstract: A coated cutting tool includes a substrate at least partially coated with a coating. The substrate is made of cemented carbide composed of hard constituents in a metallic. The metallic binder includes more than 60 wt % Ni. The coating has two or more layers, wherein the layer adjacent to the substrate is a W(CxN1-x)y layer, wherein 0.6≤x≤0.8 and 1.1≤y≤1.8 with a W(CxN1-x)y layer thickness of 0.4-7 μm.

8.

发明授权
Yttrium fluoride films and methods of preparing and using yttrium fluoride films 有权

公开(公告)号：US12031212B2

公开(公告)日：2024-07-09

申请号：US17230742

申请日：2021-04-14

Applicant: ENTEGRIS, INC.

Inventor： Carlo Waldfried , Stephen Longo , Parul Tyagi

IPC: C23C16/56 , C23C16/02 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/02

CPC classification number: C23C16/56 , C23C16/0272 , C23C16/405 , C23C16/4404 , C23C16/45525 , H01L21/02 , Y10T428/265 , Y10T428/31678

Abstract: Described are yttrium fluoride compositions, including deposited films, e.g., coatings, that contain yttrium fluoride; methods of preparing yttrium fluoride compositions and deposited film coatings that contain yttrium fluoride; as well as substrates that have a deposited film coating that contains yttrium fluoride at a surface and methods and equipment that include the substrates.

9.

发明授权
Part coated with a hydrogenated amorphous carbon coating on an undercoat comprising chromium, carbon and silicon 有权

公开(公告)号：US12012657B2

公开(公告)日：2024-06-18

申请号：US17252615

申请日：2019-06-17

Applicant: HYDROMECANIQUE ET FROTTEMENT

Inventor： Laurent Bombillon , Fabrice Prost

IPC: B32B9/00 , C23C16/02 , C23C16/26 , C23C16/32 , C23C28/00 , C23C28/04 , F16J9/26

CPC classification number: C23C28/046 , C23C16/0272 , C23C16/26 , C23C16/32 , C23C28/048 , C23C28/34 , F16J9/26

Abstract: Disclosed is a part including a metal substrate, a non-hydrogenated amorphous ta-C or aC carbon coating that coats the substrate, and an undercoat which is based on chromium (Cr), carbon (C) and silicon (Si) and is disposed between the metal substrate and the amorphous carbon coating and to which the amorphous carbon coating is applied, characterized in that the undercoat included, at its interface with the amorphous carbon coating, a ratio of silicon in atomic percent to chromium in atomic percent (Si/Cr) of 0.35 to 0.60, and a ratio of carbon in atomic percent to silicon in atomic percent (C/Si) of 2.5 to 3.5.