公开(公告)号：US07060197B2

公开(公告)日：2006-06-13

申请号：US10362654

申请日：2002-06-08

Applicant: Matthias Fuertsch ,  Frank Fischer ,  Lars Metzger ,  Frieder Sundermeier

Inventor： Matthias Fuertsch ,  Frank Fischer ,  Lars Metzger ,  Frieder Sundermeier

IPC: C23F1/00

CPC classification number: G01F1/6845

Abstract: In a mass flow sensor having a layered structure on the upper side of a silicon substrate (1), and having at least one heating element (8) patterned out of a conductive layer in the layered structure, thermal insulation between the heating element (8) and the silicon substrate (1) is achieved by way of a silicon dioxide block (5) which is produced beneath the heating element (8) either in the layered structure on the silicon substrate (1) or in the upper side of the silicon substrate (1). As a result, the sensor can be manufactured by surface micromechanics, i.e. without wafer back-side processes.

Abstract translation: 在具有层叠结构的质量流量传感器中，在硅衬底（1）的上侧具有至少一层由层叠结构中的导电层构图的加热元件（8），加热元件（8） ）和硅衬底（1）通过二氧化硅块（5）实现，该二氧化硅块（5）在硅衬底（1）上的层状结构中或在硅的上侧在加热元件（8）下方产生 基板（1）。 结果，传感器可以通过表面微机械制造，即没有晶片背面工艺。

公开(公告)号：US20050098840A1

公开(公告)日：2005-05-12

申请号：US10970069

申请日：2004-10-19

Applicant: Matthias Fuertsch ,  Stefan Pinter ,  Heribert Weber ,  Frank Fischer ,  Lars Metzger ,  Christoph Schelling ,  Frieder Sundermeier

Inventor： Matthias Fuertsch ,  Stefan Pinter ,  Heribert Weber ,  Frank Fischer ,  Lars Metzger ,  Christoph Schelling ,  Frieder Sundermeier

IPC: B81B3/00 ,  B81C1/00 ,  H01L21/00 ,  H01L27/14

CPC classification number: B81B3/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C2201/0167

Abstract: A micromechanical structural element, having a very stable diaphragm, implemented in a pure front process and in a layer construction on a substrate. The layer construction includes at least one sacrificial layer and one diaphragm layer above the sacrificial layer, which is structured for laying bare the diaphragm and generating stabilizing elements on the diaphragm, at least one recess being generated for a stabilizing element of the diaphragm. The structure generated in the sacrificial layer is then at least superficially closed with at least one material layer being deposited above the structured sacrificial layer, this material layer forming at least a part of the diaphragm layer and being structured to generate at least one etch hole for etching the sacrificial layer, which is removed from the region under the etch hole, the diaphragm and the at least one stabilizing element being laid bare, a cavity being created under the diaphragm.

Abstract translation: 具有非常稳定的隔膜的微机械结构元件以纯正的前工艺和基底上的层结构实现。 该层结构包括至少一个牺牲层和牺牲层上方的一个隔膜层，其被构造用于铺设隔膜并在隔膜上产生稳定元件，为隔膜的稳定元件产生至少一个凹槽。 然后在牺牲层中产生的结构至少被表面封闭，其中至少一个材料层沉积在结构化牺牲层的上方，该材料层形成隔膜层的至少一部分并被构造成产生至少一个蚀刻孔 蚀刻从蚀刻孔下方的区域去除的牺牲层，隔膜和至少一个稳定元件被裸露，在隔膜下面形成空腔。

公开(公告)号：US20050022593A1

公开(公告)日：2005-02-03

申请号：US10900695

申请日：2004-07-27

Applicant: Jochen Franz ,  Matthias Fuertsch ,  Stefan Finkbeiner ,  Stefan Weiss ,  Axel Kaschner

Inventor： Jochen Franz ,  Matthias Fuertsch ,  Stefan Finkbeiner ,  Stefan Weiss ,  Axel Kaschner

IPC: G01F1/684 ,  G01F1/68

CPC classification number: G01F1/6845

Abstract: In a micromechanical sensor and/or a method for manufacturing a micromechanical sensor for detecting a state variable of a substance, the sensor includes at least one heating element, one temperature measuring element and optionally an inlet opening into and/or an outlet opening out of the cavity for this purpose. The sensor includes a cavity configured to at least partially receive the substance through one of the inlet openings and discharge it again at least partially through one of the outlets or outlet openings. The at least one state variable of the substance is detected here as a function of at least one variable representing the operation of the at least one heating element and/or the operation of the at least one temperature element.

Abstract translation: 在微机械传感器和/或用于制造用于检测物质的状态变量的微机械传感器的方法中，传感器包括至少一个加热元件，一个温度测量元件和可选地入口和/或出口开口 为此目的的腔。 该传感器包括被配置成至少部分地通过其中一个入口开口接收物质的空腔，并再次至少部分地通过其中一个出口或出口排出。 物质的至少一个状态变量在此被视为表示至少一个加热元件的操作和/或至少一个温度元件的操作的至少一个变量的函数。

公开(公告)号：US06523403B1

公开(公告)日：2003-02-25

申请号：US09696461

申请日：2000-10-25

Applicant: Matthias Fuertsch ,  Heribert Weber

Inventor： Matthias Fuertsch ,  Heribert Weber

IPC: G01F168

CPC classification number: G01F1/6845 ,  G01F1/692

Abstract: A mass flow sensor is described. To improve the membrane stability of the known mass flow sensor and to increase the thermal conductivity of a membrane having a greater mechanical stability, in particular the membrane has at least one dielectric or nonconducting adjustment layer with a thermal conductivity which is greater than that of a silicon oxide layer of the same thickness, the adjustment layer being used to adjust the thermal conductivity of the membrane. One of the preferred adjustment layers is polycrystalline silicon.

Abstract translation: 描述质量流量传感器。 为了改善已知质量流量传感器的膜稳定性并增加具有更大机械稳定性的膜的热导率，特别地，该膜具有至少一个介电或非导电调节层，其导热率大于 具有相同厚度的氧化硅层，调节层用于调节膜的热导率。 优选的调整层之一是多晶硅。