公开(公告)号：US20200328076A1

公开(公告)日：2020-10-15

申请号：US16383159

申请日：2019-04-12

Applicant: Micron Technology, Inc.

Inventor： Sevim Korkmaz ,  Sanjeev Sapra ,  Jerome A. Imonigie ,  Armin Saeedi Vahdat

IPC: H01L21/02 ,  H01L49/02 ,  H01L27/108

Abstract: Methods, apparatuses, and systems related to semiconductor processing (e.g., of a capacitor support structure) are described. An example method includes patterning a surface of a semiconductor substrate to have a first silicate material, a nitride material over the first silicate material, and a second silicate material over the nitride material. The method further includes removing the first silicate material and the second silicate material and leaving the nitride material as a support structure for a column formed from a capacitor material. The method further includes performing supercritical drying on the column, after removal of the first and second silicate materials, to reduce a probability of the column wobbling relative to otherwise drying the column after the removal of the first and second silicate materials.