Semiconductor processing applying supercritical drying

    公开(公告)号:US11127588B2

    公开(公告)日:2021-09-21

    申请号:US16383159

    申请日:2019-04-12

    Abstract: Methods, apparatuses, and systems related to semiconductor processing (e.g., of a capacitor support structure) are described. An example method includes patterning a surface of a semiconductor substrate to have a first silicate material, a nitride material over the first silicate material, and a second silicate material over the nitride material. The method further includes removing the first silicate material and the second silicate material and leaving the nitride material as a support structure for a column formed from a capacitor material. The method further includes performing supercritical drying on the column, after removal of the first and second silicate materials, to reduce a probability of the column wobbling relative to otherwise drying the column after the removal of the first and second silicate materials.

    Oxidative trim
    2.
    发明授权

    公开(公告)号:US10985239B2

    公开(公告)日:2021-04-20

    申请号:US16543065

    申请日:2019-08-16

    Abstract: Methods, apparatuses, and systems related to trim a semiconductor structure using oxygen are described. An example method includes forming a support structure for a semiconductor structure having a first silicate material on a working surface. The method further includes forming a first nitride material on the first silicate material. The method further includes forming a second silicate material on the first nitride material. The method further includes forming a second nitride material on the second silicate material. The method further includes forming an opening through the semiconductor structure. The method further includes depositing an electrode material within the opening. The method further includes removing portions of the support structure. The method further includes performing a controlled oxidative trim to an upper portion of the electrode material.

    SEMICONDUCTOR STRUCTURE PATTERNING
    3.
    发明申请

    公开(公告)号:US20200381437A1

    公开(公告)日:2020-12-03

    申请号:US16423684

    申请日:2019-05-28

    Abstract: Methods, apparatuses, and systems related to removing a hard mask are described. An example method includes patterning a silicon hard mask on a semiconductor structure having a first silicate material on a working surface. The method further includes forming a first nitride material on the first silicate material. The method further includes forming a second silicate material on the first nitride material. The method further includes forming a second nitride material on the second silicate material. The method further includes an opening through the semiconductor structure using the patterned hard mask to form a pillar support. The method further includes forming a silicon liner material on the semiconductor structure. The method further includes removing the silicon liner material using a wet etch process.

    FORMATION OF A CAPACITOR USING A SACRIFICIAL LAYER

    公开(公告)号:US20200243258A1

    公开(公告)日:2020-07-30

    申请号:US16258904

    申请日:2019-01-28

    Abstract: Methods, apparatuses, and systems related to forming a capacitor using a sacrificial material are described. An example method includes forming a first silicate material on a substrate. The method further includes forming a first nitride material on the first silicate material. The method further includes forming a second silicate material on the first nitride material. The method further includes forming a second nitride material on the second silicate material. The method further includes forming a sacrificial material on the second nitride material. The method further includes forming a column of capacitor material through the first silicate material, the first nitride material, the second silicate material, the second nitride material, and the sacrificial material. The method further includes removing the sacrificial material to expose a top portion of the capacitor material.

    OVER-SCULPTED STORAGE NODE
    6.
    发明公开

    公开(公告)号:US20240088211A1

    公开(公告)日:2024-03-14

    申请号:US17944649

    申请日:2022-09-14

    CPC classification number: H01L28/92 H01L27/108

    Abstract: Methods, apparatuses, and systems related to an over-sculpted storage node are described. An example method includes forming an opening in a pattern of materials. The method further includes performing an etch to over-sculpt the opening. The method further includes depositing a storage node material in the over-sculpted opening to form an over-sculpted storage node. The method further includes performing an etch to remove portions of the pattern of materials. The method further includes performing an etch on the storage node material to trim the over-sculpted storage node.

    Semiconductor structure patterning

    公开(公告)号:US11011521B2

    公开(公告)日:2021-05-18

    申请号:US16423684

    申请日:2019-05-28

    Abstract: Methods, apparatuses, and systems related to removing a hard mask are described. An example method includes patterning a silicon hard mask on a semiconductor structure having a first silicate material on a working surface. The method further includes forming a first nitride material on the first silicate material. The method further includes forming a second silicate material on the first nitride material. The method further includes forming a second nitride material on the second silicate material. The method further includes an opening through the semiconductor structure using the patterned hard mask to form a pillar support. The method further includes forming a silicon liner material on the semiconductor structure. The method further includes removing the silicon liner material using a wet etch process.

    Formation of a capacitor using a sacrificial layer

    公开(公告)号:US10964475B2

    公开(公告)日:2021-03-30

    申请号:US16258904

    申请日:2019-01-28

    Abstract: Methods, apparatuses, and systems related to forming a capacitor using a sacrificial material are described. An example method includes forming a first silicate material on a substrate. The method further includes forming a first nitride material on the first silicate material. The method further includes forming a second silicate material on the first nitride material. The method further includes forming a second nitride material on the second silicate material. The method further includes forming a sacrificial material on the second nitride material. The method further includes forming a column of capacitor material through the first silicate material, the first nitride material, the second silicate material, the second nitride material, and the sacrificial material. The method further includes removing the sacrificial material to expose a top portion of the capacitor material.

    OXIDATIVE TRIM
    10.
    发明申请

    公开(公告)号:US20210050409A1

    公开(公告)日:2021-02-18

    申请号:US16543065

    申请日:2019-08-16

    Abstract: Methods, apparatuses, and systems related to trim a semiconductor structure using oxygen are described. An example method includes forming a support structure for a semiconductor structure having a first silicate material on a working surface. The method further includes forming a first nitride material on the first silicate material. The method further includes forming a second silicate material on the first nitride material. The method further includes forming a second nitride material on the second silicate material. The method further includes forming an opening through the semiconductor structure. The method further includes depositing an electrode material within the opening. The method further includes removing portions of the support structure. The method further includes performing a controlled oxidative trim to an upper portion of the electrode material.

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