公开(公告)号：US20140014911A1

公开(公告)日：2014-01-16

申请号：US13728888

申请日：2012-12-27

Applicant: NATIONAL TAIWAN UNIVERSITY

Inventor： CHING-FUH LIN ,  MING-SHIUN LIN

IPC: H01L51/50 ,  H01L51/56

CPC classification number: H01L51/5036 ,  H01L33/502 ,  H01L51/56 ,  H01L2933/0041 ,  Y02B20/181

Abstract: The present invention relates to a LED (light-emitting diode) phosphor and fabricating method thereof, and particularly relates to a LED phosphor having a light-emitting thin film (or photoluminescence thin film) made of an organic material and a zinc oxide microstructure (or nanostructure) and a method for fabricating the LED phosphor by hydrothermal method and combination of the organic material and the zinc oxide microstructure (or nanostructure). In this invention, the light-emitting thin film (or photoluminescence thin film) made of the organic material and the zinc oxide microstructure (or nanostructure) is applied instead of rare earth elements to fabricate the LED phosphor. Therefore, the cost of the LED phosphor and the white LED can be reduced and the processes for fabricating the LED phosphor and the white LED can be simplified.

Abstract translation: 本发明涉及一种LED（发光二极管）荧光体及其制造方法，特别涉及一种具有由有机材料和氧化锌微结构构成的发光薄膜（或光致发光薄膜）的LED荧光体（ 或纳米结构）以及通过水热法和有机材料与氧化锌微结构（或纳米结构）的组合来制造LED荧光体的方法。 在本发明中，使用由有机材料制成的发光薄膜（或光致发光薄膜）和氧化锌微结构（或纳米结构）代替稀土元素来制造LED荧光体。 因此，可以降低LED荧光体和白色LED的成本，并且可以简化制造LED荧光体和白色LED的工艺。

公开(公告)号：US20130130423A1

公开(公告)日：2013-05-23

申请号：US13743930

申请日：2013-01-17

Applicant: National Taiwan University

Inventor： CHING-FUH LIN ,  KAO-HUA TSAI

IPC: H01L51/00

CPC classification number: H01L51/0021 ,  H01L51/0036 ,  H01L51/0097 ,  H01L51/4213 ,  Y02E10/549 ,  Y02P70/521

Abstract: A flexible optoelectronic device having inverted electrode structure is disclosed. The flexible optoelectronic device having inverted electrode structure includes a flexible plastic substrate having a cathode structure, an n-type oxide semiconductor layer, an organic layer, and an anode. The n-type oxide semiconductor layer is disposed on the cathode structure. The organic layer is disposed on the n-type oxide semiconductor layer. The anode is electrically connected with the organic layer.

Abstract translation: 公开了一种具有反向电极结构的柔性光电器件。 具有反转电极结构的柔性光电子器件包括具有阴极结构的柔性塑料基板，n型氧化物半导体层，有机层和阳极。 n型氧化物半导体层设置在阴极结构上。 有机层配置在n型氧化物半导体层上。 阳极与有机层电连接。