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    Semiconductor light emitting device
    1.
    发明授权
    Semiconductor light emitting device 有权

    公开(公告)号：US12132154B2

    公开(公告)日：2024-10-29

    申请号：US17483118

    申请日：2021-09-23

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Dongkuk Lee ,  Daesup Kim ,  Dongmyung Shin ,  Wooseok Jang ,  Sunhwan Hwang

    IPC分类号： H01L33/50 ,  H01L33/00 ,  H01L33/60 ,  H01L33/62

    CPC分类号： H01L33/504 ,  H01L33/0095 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0041

    摘要： A semiconductor light emitting device is provided. The device includes: an LED chip having a lower surface, an upper surface, and a side surface between the upper surface and the lower surface; first and second conductive bumps disposed on first and second conductive bumps provided on the lower surface; a first wavelength conversion layer having a first region provided on the upper surface of the LED chip and a second region which extends past the side surface of the LED chip; a second wavelength conversion layer having a first surface contacting the side surface of the LED chip, a second surface, a third surface connecting the first surface and the second surface, and contacting the second region, and a fourth surface located opposite to the third surface and inclined; and a reflective resin portion provided on the lower surface of the LED chip and the fourth surface.

    Light emitting device
    2.
    发明授权
    Light emitting device 有权

    公开(公告)号：US12132143B2

    公开(公告)日：2024-10-29

    申请号：US18126487

    申请日：2023-03-27

    申请人： InnoLux Corporation

    发明人： Hsiao-Lang Lin ,  Tsung-Han Tsai

    IPC分类号： H01L33/00 ,  H01L25/075 ,  H01L33/50

    CPC分类号： H01L33/0095 ,  H01L25/0753 ,  H01L33/502 ,  H01L2933/0041

    摘要： The present disclosure provides a light emitting device including a substrate, a plurality of light emitting elements disposed on the substrate, a partition wall disposed on the substrate, a light conversion element, an encapsulation layer disposed on the light emitting element, an intermediate layer disposed between the light conversion element and one of the light emitting elements, and a protection layer disposed between the intermediate layer and the light emitting elements. The partition wall defines a plurality of cavities, and one of the cavities corresponds to one of the light emitting elements. The light conversion element is disposed in the one of the cavities.

    Light emitting device with high near-field contrast ratio
    7.
    发明授权
    Light emitting device with high near-field contrast ratio 有权

    公开(公告)号：US12100786B2

    公开(公告)日：2024-09-24

    申请号：US17341743

    申请日：2021-06-08

    申请人： LUMILEDS LLC

    发明人： Grigoriy Basin ,  Lex Alan Kosowsky ,  Chee Ming Thoe ,  Choon Earn Chan

    IPC分类号： H01L33/50 ,  H01L33/60

    CPC分类号： H01L33/501 ,  H01L33/505 ,  H01L33/60 ,  H01L2933/0041 ,  H01L2933/0058

    摘要： A light emitting device includes an LED having a light emitting top surface and sidewalls. A phosphor structure is attached to the light emitting surface of the LED. The phosphor structure has a light emitting top surface facing away from the LED light emitting surface, and sidewalls. A light reflective material is arranged to cover the sidewalls of the LED and the phosphor structure. A light absorptive region is defined in the light reflective material around a perimeter of the light emitting surface of the phosphor structure. The light absorptive region may be spaced apart from the perimeter of the phosphor structure by a gap. The light absorptive region may be formed by ultraviolet laser illumination of the light reflecting material.

    Light-emitting device
    8.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US12095012B2

    公开(公告)日：2024-09-17

    申请号：US17377784

    申请日：2021-07-16

    申请人： EPISTAR CORPORATION ,  Yenrich Technology Corporation

    发明人： Min-Hsun Hsieh ,  Kunal Kashyap

    IPC分类号： H01L33/00 ,  H01L33/50 ,  H01L33/54

    CPC分类号： H01L33/54 ,  H01L33/0093 ,  H01L33/50 ,  H01L33/007 ,  H01L2933/0041 ,  H01L2933/005

    摘要： A light-emitting device includes a semiconductor stack, a first electrode, a second electrode, and a supporting layer. The semiconductor stack includes a first semiconductor layer including a first top surface and a bottom surface, an active layer located on the first semiconductor layer, and a second semiconductor layer located on the active layer and including a second top surface. The first electrode is located on the first top surface. The second electrode is located on the second top surface. The supporting layer includes a first thickness, and directly covers at least 80% of the bottom surface. In a top view, the semiconductor stack includes a maximum length, and a ratio of the maximum length to the first thickness is smaller than 1. The supporting layer has a first thermal expansion coefficient smaller than 80 ppm/° C., and the supporting layer has a Young's modulus between 2˜10 GPa.