公开(公告)号：US20180212100A1

公开(公告)日：2018-07-26

申请号：US15879333

申请日：2018-01-24

Applicant: NICHIA CORPORATION

Inventor： Naoto INOUE ,  Yoshitaka SUMITOMO

IPC: H01L33/00

CPC classification number: H01L33/0095 ,  H01L21/78

Abstract: A method of manufacturing a light emitting element includes: providing a wafer that includes a substrate having a first principal face and a second principal face, a dielectric multilayer film disposed on the first principal face, and a semiconductor structure disposed on the second principal face; forming modified regions in the substrate by focusing a laser beam inside the substrate via the dielectric multilayer film, and allowing cracks to form from the modified regions to the dielectric multilayer film; subsequent to forming the modified regions in the substrate, removing regions of the dielectric multilayer film that contain cracks; and cleaving the wafer along regions where cracks were formed in the substrate.