公开(公告)号：US20180247871A1

公开(公告)日：2018-08-30

申请号：US15902756

申请日：2018-02-22

Applicant: NICHIA CORPORATION

Inventor： Naoto INOUE ,  Sho KUSAKA ,  Minoru YAMAMOTO ,  Masayuki IBARAKI ,  Hiroaki TAMEMOTO

IPC: H01L21/78 ,  H01L33/00

Abstract: A method of manufacturing a semiconductor element includes: providing a wafer having a semiconductor layered body on a sapphire substrate; irradiating a laser light in an interior region of the sapphire substrate to create cracks in the sapphire substrate by performing a first scan to irradiate the laser light at a first depth with a first pulse energy to create a first modified region, and a second scan following the first scan to irradiate the laser light at a second depth with a second pulse energy greater than the first pulse energy along and within the first modified region; and dividing the wafer by extending the cracks to obtain a semiconductor element.

公开(公告)号：US20240258170A1

公开(公告)日：2024-08-01

申请号：US18422925

申请日：2024-01-25

Applicant: NICHIA CORPORATION

Inventor： Minoru YAMAMOTO ,  Naoto INOUE ,  Masayuki IBARAKI ,  Hiroaki TAMEMOTO

IPC: H01L21/78 ,  H01L21/428

CPC classification number: H01L21/78 ,  H01L21/428

Abstract: A method of manufacturing a semiconductor element includes irradiating a laser beam on a wafer, which includes a sapphire substrate having a first face and a second face opposite the first face and a semiconductor structure disposed on the first face, from a second face side. The laser beam irradiated along a first direction parallel to the second face of the sapphire substrate is focused inside the sapphire substrate to thereby create a modified portion in the sapphire substrate along the first direction. The wafer is severed and separated into a number of semiconductor elements following the formation of a modified portion. In the step of forming a modified portion, the laser beam is focused closer to the second face than to the first face in a thickness direction of the sapphire substrate.

公开(公告)号：US20210098647A1

公开(公告)日：2021-04-01

申请号：US17033926

申请日：2020-09-28

Applicant: NICHIA CORPORATION

Inventor： Kazuki YAMAGUCHI ,  Naoto INOUE ,  Masaaki SHUTO

IPC: H01L33/00

Abstract: A method of manufacturing a light-emitting element includes condensing a laser beam inside a substrate provided with a semiconductor structure to form modified portions including first and second modified portions, including scanning the substrate along a predetermined planned cleavage line to form the first modified portions on the planned cleavage line inside the substrate and cracks generated from the first modified portions, and then scanning the substrate with a laser beam along a first predetermined imaginary line parallel to the planned cleavage line in a top view and is offset from the planned cleavage line in an in-plane direction of the substrate by a predetermined distance to perform second irradiation to form the second modified portions on the first predetermined imaginary line inside the substrate to facilitate development of the cracks generated from the first modified portions. The method then includes cleaving the substrate starting from the first modified portions.

公开(公告)号：US20210036182A1

公开(公告)日：2021-02-04

申请号：US16945729

申请日：2020-07-31

Applicant: NICHIA CORPORATION

Inventor： Masayuki IBARAKI ,  Minoru YAMAMOTO ,  Naoto INOUE ,  Hiroaki TAMEMOTO

IPC: H01L33/00 ,  H01L33/20 ,  H01L25/075

Abstract: A method of manufacturing a light emitting element according to certain embodiments of the present disclosure includes: scanning and irradiating a first laser light having a first irradiation intensity to a sapphire substrate along predetermined dividing lines collectively in a shape of a tessellation of a plurality of hexagonal shapes in a top view to create a plurality of first modified regions along the predetermined dividing lines; and scanning and irradiating a second laser light having a second irradiation intensity greater than the first irradiation intensity to the sapphire substrate along the predetermined dividing lines to create a plurality of second modified regions overlapping the plurality of first modified regions.

公开(公告)号：US20230138592A1

公开(公告)日：2023-05-04

申请号：US17964034

申请日：2022-10-12

Applicant: NICHIA CORPORATION ,  HAMAMATSU PHOTONICS K.K.

Inventor： Naoto INOUE ,  Minoru YAMAMOTO ,  Taichi OKUBO ,  Hiroaki TAMEMOTO ,  Ryota SUGIO ,  Yusuke SEKIMOTO

IPC: H01L33/00

Abstract: A method for manufacturing a light-emitting element includes preparing a wafer; a laser beam irradiation process; and a separation process. The laser beam irradiation process includes a first irradiation process of forming a plurality of first modified portions, and a second irradiation process of forming a plurality of second modified portions. The second modified portions are formed in the second irradiation process so that a length in a thickness direction of the sapphire substrate of the second modified portions is greater than a length in the thickness direction of the first modified portions.

公开(公告)号：US20200287074A1

公开(公告)日：2020-09-10

申请号：US16807853

申请日：2020-03-03

Applicant: NICHIA CORPORATION

Inventor： Naoto INOUE

IPC: H01L33/00

Abstract: A method for manufacturing a light-emitting element includes: providing a wafer comprising: a substrate having a first surface and a second surface, and a semiconductor structure provided at the first surface; irradiating a laser beam into an interior of the substrate from a second surface side of the substrate, which comprises: forming a plurality of first modified regions, a plurality of second modified regions, and a plurality of third modified regions in the interior of the substrate; and subsequently, separating the wafer into a plurality of light-emitting elements.

公开(公告)号：US20210005777A1

公开(公告)日：2021-01-07

申请号：US16908354

申请日：2020-06-22

Applicant: NICHIA CORPORATION

Inventor： Naoto INOUE ,  Minoru YAMAMOTO ,  Satoshi OKUMURA ,  Hiroki OKAMOTO ,  Hiroaki TAMEMOTO

IPC: H01L33/00

Abstract: A method of manufacturing light emitting elements includes: providing a wafer including a substrate formed of sapphire and having a first main surface and a second main surface, and a semiconductor layered body disposed on the first main surface of the substrate; irradiating a laser beam into the substrate to form a modified region inside the substrate, the modified region having a crack reaching the first main surface and a crack reaching the second main surface; irradiating CO2 laser to a region of the substrate overlapping with a region to which the laser beam has been irradiated; and cleaving the wafer along the modified region to obtain the light emitting elements each having a hexagonal shape in a plan view.

公开(公告)号：US20200075794A1

公开(公告)日：2020-03-05

申请号：US16678169

申请日：2019-11-08

Applicant: NICHIA CORPORATION

Inventor： Naoto INOUE ,  Sho KUSAKA

IPC: H01L33/00 ,  H01L21/78 ,  B23K26/00 ,  B23K26/53

Abstract: A method of manufacturing a light emitting element includes: providing a wafer comprising: a sapphire substrate having a first face and a second face, and a semiconductor structure disposed on the second face; irradiating the substrate with a laser beam to form a plurality of modified regions in the substrate; and subsequently, separating the wafer into a plurality of light emitting elements.

公开(公告)号：US20190081201A1

公开(公告)日：2019-03-14

申请号：US16125240

申请日：2018-09-07

Applicant: NICHIA CORPORATION

Inventor： Naoto INOUE ,  Sho KUSAKA

IPC: H01L33/00 ,  B23K26/53

CPC classification number: H01L33/005 ,  B23K26/0006 ,  B23K26/53 ,  B23K2103/56 ,  H01L21/78 ,  H01L2933/0033

Abstract: A method of manufacturing a light emitting element includes: providing a wafer including: a substrate, and a semiconductor structure; irradiating the substrate with a laser beam to form a plurality of modified regions in the substrate; and subsequently, separating the wafer into a plurality of light emitting elements. Irradiating the substrate with a laser beam includes: performing a first irradiation step comprising irradiating the laser beam along a plurality of first lines that extend in a first direction that is parallel to the first face and that are aligned in a second direction that is parallel to the first face and intersects the first direction, and subsequent to performing the first irradiation step, performing a second irradiation step comprising irradiating the laser beam along second lines that extend in the second direction.

公开(公告)号：US20180240933A1

公开(公告)日：2018-08-23

申请号：US15899095

申请日：2018-02-19

Applicant: NICHIA CORPORATION

Inventor： Yoshitaka SUMITOMO ,  Katsuyuki KAWABATA ,  Naoto INOUE

IPC: H01L33/00 ,  H01L33/46

CPC classification number: H01L33/005 ,  H01L33/0095 ,  H01L33/16 ,  H01L33/46 ,  H01L2933/0025

Abstract: A method of manufacturing a light emitting element includes: providing a wafer that comprises: a substrate having a first main surface and a second main surface, a dielectric multilayer film on the first main surface, and a semiconductor structure on the second main surface; focusing laser light onto an inner portion of the substrate from a first main surface side of the substrate, to simultaneously form a modified region in the substrate and remove a portion of the dielectric multilayer film; and cleaving the wafer at a portion where the modified region is formed to obtain a plurality of light emitting elements.