公开(公告)号：US09389623B2

公开(公告)日：2016-07-12

申请号：US14135583

申请日：2013-12-20

Applicant: NOVATEK Microelectronics Corp.

Inventor： Min-Hung Hu ,  Pin-Han Su ,  Chen-Tsung Wu ,  Chiu-Huang Huang ,  Chun-Wei Huang

IPC: H02M1/00 ,  G05F1/56

CPC classification number: G05F1/56

Abstract: A voltage converting device with a self-reference feature for an electronic system includes a differential current generating module, implemented in a Complementary metal-oxide-semiconductor (CMOS) processing for generating a differential current pair according to a converting voltage; and a voltage converting module, coupled to the differential current generating module, a first supply voltage and a second supply voltage of the electronic system for generating the converting voltage according to the differential current pair, the first supply voltage and the second supply voltage.

Abstract translation: 具有用于电子系统的自参考特征的电压转换装置包括：差分电流产生模块，用于根据转换电压产生差动电流对的互补金属氧化物半导体（CMOS）处理; 以及耦合到所述差分电流产生模块的电压转换模块，所述电子系统的第一电源电压和第二电源电压用于根据所述差动电流对，所述第一电源电压和所述第二电源电压产生转换电压。

公开(公告)号：US20140306676A1

公开(公告)日：2014-10-16

申请号：US14228235

申请日：2014-03-27

Applicant: NOVATEK Microelectronics Corp.

Inventor： Min-Hung Hu ,  Pin-Han Su ,  Chun-Wei Huang ,  Chen-Tsung Wu ,  Chiu-Huang Huang

IPC: G05F1/575

CPC classification number: G05F1/575 ,  G05F1/56

Abstract: A compensation module for a voltage regulation device having a gain stage, an output stage and a miller compensation module includes a low-output-impedance non-inverting amplifier unit coupled to a gain output of the gain stage and an output-stage input of the output stage.

Abstract translation: 具有增益级，输出级和铣刀补偿模块的电压调节装置的补偿模块包括耦合到增益级的增益输出的低输出阻抗非反相放大器单元和输出级输入 输出阶段。

公开(公告)号：US20140091780A1

公开(公告)日：2014-04-03

申请号：US13928346

申请日：2013-06-26

Applicant: Novatek Microelectronics Corp.

Inventor： Min-Hung Hu ,  Chiu-Huang Huang ,  Chen-Tsung Wu ,  Juin-Wei Huang ,  Pin-Han Su

IPC: G05F1/46

CPC classification number: G05F1/462 ,  G05F3/30

Abstract: A reference voltage generator including a reference voltage generating unit is provided. The reference voltage generating unit receives a first bias voltage current and a first mirror current and generates a reference voltage. The reference voltage generating unit includes a first metal-oxide-semiconductor (MOS) transistor, a second MOS transistor, a first impedance providing element and a second impedance providing element. The first and the second MOS transistors operate in a sub-threshold region so as to generate a first gate-source voltage and a second gate-source voltage having a negative temperature coefficient. The first impedance providing element is configured to generate a first current having a positive temperature coefficient. The second impedance providing element is configured to generate a first voltage having a negative temperature coefficient at its first terminal. The reference voltage is equal to a sum of the second gate-source voltage and the first voltage.

Abstract translation: 提供了包括参考电压产生单元的参考电压发生器。 参考电压产生单元接收第一偏置电压电流和第一反射镜电流并产生参考电压。 参考电压产生单元包括第一金属氧化物半导体（MOS）晶体管，第二MOS晶体管，第一阻抗提供元件和第二阻抗提供元件。 第一和第二MOS晶体管在亚阈值区域中工作，以产生具有负温度系数的第一栅极 - 源极电压和第二栅极 - 源极电压。 第一阻抗提供元件被配置为产生具有正温度系数的第一电流。 第二阻抗提供元件被配置为在其第一端产生具有负温度系数的第一电压。 参考电压等于第二栅极 - 源极电压和第一电压的和。