公开(公告)号：US20140145294A1

公开(公告)日：2014-05-29

申请号：US13687110

申请日：2012-11-28

Applicant: NXP B.V.

Inventor： Sascha Moeller ,  Martin Lapke

IPC: H01L27/04 ,  H01L21/78

CPC classification number: H01L21/78

Abstract: A method is provided for separation of a wafer into individual ICs. Channels are formed in the one or more metallization layers on a front-side of the wafer along respective lanes. The lanes are located between the ICs and extend between a front-side of the metallization layers and a backside of the substrate. A backside of the substrate is thinned, and laser pulses are applied via the backside of the substrate to change the crystalline structure of the silicon substrate along the lanes. The plurality of portions in the silicon substrate and the channels are configured to propagate cracks in the silicon substrate along the lanes during expansion of the IC wafer. The channels assist to mitigate propagation of cracks outside of the lanes in the metallization layers during expansion of the IC wafer.

Abstract translation: 提供了一种用于将晶片分离成单个IC的方法。 通道沿着各个通道形成在晶片前侧上的一个或多个金属化层中。 通道位于IC之间并且在金属化层的前侧和衬底的背面之间延伸。 衬底的背面变薄，并且通过衬底的背面施加激光脉冲以沿着通道改变硅衬底的晶体结构。 硅衬底和通道中的多个部分被配置为在IC晶片的膨胀期间沿着通道在硅衬底中传播裂纹。 在IC晶片的膨胀期间，通道有助于减轻在金属化层中的通道外的裂纹的传播。