公开(公告)号：US09601437B2

公开(公告)日：2017-03-21

申请号：US14481051

申请日：2014-09-09

申请人： NXP B.V.

发明人： Guido Albermann ,  Sascha Moeller ,  Thomas Rohleder ,  Martin Lapke ,  Hartmut Buenning

IPC分类号： H01L21/78 ,  H01L21/304 ,  H01L21/306 ,  H01L23/544 ,  H01L21/683

CPC分类号： H01L23/544 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/00

摘要： Consistent with an example embodiment, a method for preparing integrated circuit (IC) device die from a wafer substrate having a front-side with active devices and a back-side, comprises mounting the front-side of the wafer onto protective foil. A laser is applied to saw lane areas on the backside of the wafer, at a first focus depth to define a modification zone; the modification zone defined at a pre-determined depth within active device boundaries and the active device boundaries defined by the saw lane areas. The protective foil is stretched to separate IC device die from one another and expose active device side-walls. With dry-etching of the active device side-walls, the modification zone is substantially removed.

公开(公告)号：US08809166B2

公开(公告)日：2014-08-19

申请号：US13721674

申请日：2012-12-20

申请人： NXP B.V.

发明人： Hartmut Buenning ,  Sascha Moeller ,  Martin Lapke ,  Guido Albermann ,  Thomas Rohleder

IPC分类号： H01L21/00 ,  H01L21/78

CPC分类号： H01L21/78 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50

摘要： Embodiments of methods and systems for processing a semiconductor wafer are described. In one embodiment, a method for processing a semiconductor wafer involves performing laser stealth dicing on the semiconductor wafer to form a stealth dicing layer within the semiconductor wafer and after performing laser stealth dicing, cleaning the semiconductor wafer from a back-side surface of the semiconductor wafer with a blade to remove at least a portion of the stealth dicing layer. Other embodiments are also described.

摘要翻译： 描述了用于处理半导体晶片的方法和系统的实施例。 在一个实施例中，用于处理半导体晶片的方法包括在半导体晶片上执行激光隐形切割以在半导体晶片内形成隐形切割层，并且在执行激光隐形切割之后，从半导体的背面清洗半导体晶片 具有刀片的晶片以去除隐形切割层的至少一部分。 还描述了其它实施例。

公开(公告)号：US20210305095A1

公开(公告)日：2021-09-30

申请号：US16828115

申请日：2020-03-24

申请人： NXP B.V.

发明人： Sascha Moeller ,  Guido Albermann ,  Michael Zernack

IPC分类号： H01L21/78 ,  H01L21/268 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/683 ,  H01L23/544

摘要： A semiconductor wafer having a plurality of die is attached to a support structure. The semiconductor wafer includes an active layer over a silicon layer, wherein the active layer is at a top side, and a bottom side exposes the silicon layer. While the wafer is attached to the support structure, an infrared laser beam is focused through a portion of the silicon layer to create a modification region along saw lanes located between neighboring die of the plurality of die. Afterwards, a metal layer is formed on the exposed silicon layer at the bottom side of the semiconductor wafer. The metal layer is attached to an expansion tape, and the wafer is singulated by extending the expansion tape to separate the die of the plurality of die along the saw lane. A first singulated die of the plurality of die is packaged to form a packaged semiconductor device.

公开(公告)号：US20170148697A1

公开(公告)日：2017-05-25

申请号：US15342285

申请日：2016-11-03

申请人： NXP B.V.

发明人： Tonny Kamphuis ,  Leo van Gemert ,  Hans van Rijckevorsel ,  Sascha Moeller ,  Hartmut Buenning ,  Steffen Holland ,  Y Kuang Huang

IPC分类号： H01L23/31 ,  H01L29/06 ,  H01L23/00 ,  H01L21/3205 ,  H01L21/683 ,  H01L23/528 ,  H01L21/78

CPC分类号： H01L23/3114 ,  H01L21/32051 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/528 ,  H01L24/32 ,  H01L24/83 ,  H01L29/0657 ,  H01L2221/68327 ,  H01L2224/32245 ,  H01L2224/83801 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/10156 ,  H01L2924/17747 ,  H01L2924/35 ,  H01L2924/37

摘要： A semiconductor device and a method of making the same. The device includes a semiconductor substrate having a major surface, a backside and side surfaces extending between the major surface and the backside. The semiconductor device also includes at least one metal layer extending across the backside of the substrate. A peripheral part of the at least one metal layer located at the edge of the substrate between the backside and at least one of the side surfaces extends towards a plane containing the major surface. This can prevent burrs located at the peripheral part of the at least one metal layer interfering with the mounting of the backside of the substrate on the surface of a carrier.

公开(公告)号：US20170092540A1

公开(公告)日：2017-03-30

申请号：US14871482

申请日：2015-09-30

申请人： NXP B.V.

发明人： Thomas Rohleder ,  Hartmut Buenning ,  Guido Albermann ,  Sascha Moeller ,  Martin Lapke

IPC分类号： H01L21/82 ,  H01L21/304 ,  H01L23/528 ,  H01L21/66 ,  H01L27/04 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01L21/82 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/31111 ,  H01L21/67092 ,  H01L21/78 ,  H01L22/12 ,  H01L23/528 ,  H01L27/04

摘要： Consistent with an example embodiment, there is a method for preparing an integrated circuit (IC) device from a wafer substrate, the wafer substrate having a top-side surface with a plurality of active device die separated by saw lanes and an opposite under-side surface. The method comprises coating the under-side surface of the wafer substrate with a resilient coating, locating the position of the saw lanes from the underside surface, blade dicing trenches in the resilient material to expose under-side bulk material in the position of saw lanes, and plasma etching through the trenches to remove the exposed under-side bulk material.

公开(公告)号：US20150104931A1

公开(公告)日：2015-04-16

申请号：US14055188

申请日：2013-10-16

申请人： NXP B.V.

发明人： Martin Lapke ,  Hartmut Buenning ,  Sascha Moeller ,  Guido Albermann ,  Thomas Rohleder ,  Heiko Backer

IPC分类号： H01L21/78 ,  B28D5/00

CPC分类号： H01L21/78 ,  B28D1/221 ,  B28D5/0041 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68386 ,  Y10T225/287 ,  Y10T225/298

摘要： An apparatus, device and method for wafer dicing is disclosed. In one example, the apparatus discloses: a wafer holding device having a first temperature; a die separation bar moveably coupled to the wafer holding device; and a cooling device coupled to the apparatus and having a second temperature which enables the die separation bar to fracture an attachment material in response to movement with respect to the wafer holding device. In another example, the method discloses: receiving a wafer having an attachment material applied to one side of the wafer; placing the wafer in a holding device having a first temperature; urging a die separation bar toward the wafer; and cooling the attachment material to a second temperature, which is lower than the first temperature, until the attachment material fractures in response to the urging.

摘要翻译： 公开了一种用于晶片切割的装置，装置和方法。 在一个示例中，该装置公开了：具有第一温度的晶片保持装置; 可移动地联接到晶片保持装置的模具分离杆; 以及联接到所述设备并具有第二温度的冷却装置，其使得能够使所述模具分离杆响应于相对于所述晶片保持装置的运动而破坏附着材料。 在另一示例中，该方法公开了：接收具有施加到晶片一侧的附着材料的晶片; 将晶片放置在具有第一温度的保持装置中; 推动模具分离杆朝向晶片; 并将附着材料冷却至低于第一温度的第二温度，直到附着材料响应于推动而断裂。

公开(公告)号：US10347534B2

公开(公告)日：2019-07-09

申请号：US15701849

申请日：2017-09-12

申请人： NXP B.V.

发明人： Martin Lapke ,  Hartmut Buenning ,  Sascha Moeller ,  Guido Albermann ,  Michael Zernack ,  Leo M. Higgins, III

IPC分类号： H01L21/78 ,  H01L21/268 ,  H01L21/304 ,  H01L21/683

摘要： Embodiments are provided herein for separating integrated circuit (IC) device die of a wafer, the wafer having a front side with an active device region and a back side, the active device region having a plurality of active devices arranged in rows and columns and separated by cutting lanes, the method including: attaching the front side of the wafer onto a first dicing tape; forming a modification zone within each cutting lane through the back side of the wafer, wherein each modification zone has a first thickness near a corner of each active device and a second thickness near a center point of each active device, wherein the second thickness is less than the first thickness; and propagating cracks through each cutting lane to separate the plurality of active devices.

公开(公告)号：US09812361B2

公开(公告)日：2017-11-07

申请号：US14204858

申请日：2014-03-11

申请人： NXP B.V.

发明人： Hartmut Buenning ,  Sascha Moeller ,  Guido Albermann ,  Martin Lapke ,  Thomas Rohleder

IPC分类号： H01L21/78 ,  H01L21/683 ,  H01L21/784 ,  H01L21/268

CPC分类号： H01L21/78 ,  H01L21/268 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/784 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834

摘要： Consistent with an example embodiment, there is a method for preparing integrated circuit (IC) device die from a wafer substrate having a front-side with active devices and a back-side. The method comprises pre-grinding the backside of a wafer substrate to a thickness. The front-side of the wafer is mounted onto a protective foil. A laser is applied to the backside of the wafer, at first focus depth to define a secondary modification zone in saw lanes. To the backside of the wafer, a second laser process is applied, at a second focus depth shallower than that of the first focus depth, in the saw lanes to define a main modification zone, the secondary modification defined at a pre-determined location within active device boundaries, the active device boundaries defining an active device area. The backside of the wafer is ground down to a depth so as to remove the main modification zone. The IC device die are separated from one another by stretching the protective foil.

公开(公告)号：US20160172243A1

公开(公告)日：2016-06-16

申请号：US14566761

申请日：2014-12-11

申请人： NXP B.V.

发明人： Sascha Moeller ,  Thomas Rohleder ,  Guido Albermann ,  Martin Lapke ,  Hartmut Buenning

IPC分类号： H01L21/78 ,  B23K26/364 ,  B23K26/402 ,  B23K10/00 ,  B24C1/04 ,  H01L21/3065 ,  H01J37/31 ,  H01J37/305 ,  H01J37/302 ,  H01L21/263 ,  H01L21/268 ,  B23K26/06 ,  B23K26/14

CPC分类号： H01L21/78 ,  B23K10/006 ,  B23K26/0626 ,  B23K26/14 ,  B23K26/364 ,  B23K26/402 ,  B23K2103/56 ,  B24C1/045 ,  H01J37/3023 ,  H01J37/305 ,  H01J37/31 ,  H01L21/2633 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/67092

摘要： One example discloses a system for wafer material removal, including: a wafer structures map, identifying a first device structure having a first location and a second device structure having a second location; a material removal controller, coupled to the structures map, and having a material removal beam power level output signal and a material removal beam on/off status output signal; wherein the material removal controller is configured to select a first material removal beam power level and a first material removal beam on/off status corresponding to the first location; and wherein the material removal controller is configured to select a second material removal beam power level and a second material removal beam on/off status corresponding to the second location. Another example discloses an article of manufacture comprises at least one non-transitory, tangible machine readable storage medium containing executable machine instructions for wafer material removal.

摘要翻译： 一个实例公开了一种用于晶片材料去除的系统，包括：晶片结构图，识别具有第一位置的第一器件结构和具有第二位置的第二器件结构; 材料去除控制器，耦合到结构图，并具有材料去除光束功率电平输出信号和材料去除光束开/关状态输出信号; 其中所述材料去除控制器被配置为选择对应于所述第一位置的第一材料去除束功率水平和第一材料去除束开/关状态; 并且其中所述材料去除控制器被配置为选择对应于所述第二位置的第二材料去除束功率水平和第二材料去除束开/关状态。 另一个实例公开了一种制品，其包括至少一个非暂时的，有形的机器可读存储介质，其包含用于晶片材料去除的可执行机器指令。

公开(公告)号：US09245804B2

公开(公告)日：2016-01-26

申请号：US13967084

申请日：2013-08-14

申请人： NXP B.V.

发明人： Christian Zenz ,  Hartmut Buenning ,  Leonardus Antonius Elisabeth Van Gemert ,  Tonny Kamphuis ,  Sascha Moeller

IPC分类号： H01L21/44 ,  H01L21/82 ,  H01L21/782 ,  H01L23/48 ,  H01L23/498 ,  H01L23/31 ,  H01L23/488 ,  H01L21/50 ,  H01L21/56 ,  H01L21/683 ,  H01L29/06 ,  H01L23/00

CPC分类号： H01L21/782 ,  H01L21/50 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/31 ,  H01L23/3114 ,  H01L23/3178 ,  H01L23/488 ,  H01L23/49816 ,  H01L24/11 ,  H01L29/0657 ,  H01L2221/68336 ,  H01L2221/68377 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2224/11 ,  H01L2924/014

摘要： Consistent with an example embodiment, there is a semiconductor device, with an active device having a front-side surface and a backside surface; the semiconductor device of an overall thickness, comprises an active device with circuitry defined on the front-side surface, the front-side surface having an area. The back-side of the active device has recesses f a partial depth of the active device thickness and a width of about the partial depth, the recesses surrounding the active device at vertical edges. There is a protective layer of a thickness on to the backside surface of the active device, the protective material having an area greater than the first area and having a stand-off distance. The vertical edges have the protective layer filling the recesses flush with the vertical edges. A stand-off distance of the protective material is a function of the semiconductor device thickness and the tangent of an angle (θ) of tooling impact upon a vertical face the semiconductor device.

摘要翻译： 与示例性实施例一致，存在半导体器件，其中有源器件具有正面和背面; 总体厚度的半导体器件包括具有限定在前侧表面上的电路的有源器件，前侧表面具有区域。 有源器件的背面具有有源器件厚度的部分深度和大约部分深度的宽度的凹部，在垂直边缘处围绕有源器件的凹部。 在有源器件的背面具有厚度的保护层，该保护材料的面积大于第一区域并具有间隔距离。 垂直边缘具有填充与垂直边缘齐平的凹部的保护层。 保护材料的间隔距离是半导体器件厚度和在半导体器件的垂直面上的工具冲击的角度（＆amp;）的切线的函数。