公开(公告)号：US20220254902A1

公开(公告)日：2022-08-11

申请号：US17626055

申请日：2020-06-24

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hideyuki OKITA ,  Masahiro HIKITA ,  Manabu YANAGIHARA

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/778

Abstract: A nitride semiconductor device includes a semiconductor layered structure including a substrate, a channel layer, and a barrier layer. The channel layer is formed above the substrate and made of a nitride semiconductor layer. The barrier layer is formed on the channel layer, has a wider band gap than the channel layer, and is made of a nitride semiconductor layer. The semiconductor layered structure includes an isolation region in which impurities are implanted. The position of an impurity concentration peak in the depth direction in the isolation region is deeper than the interface between the barrier layer and the channel layer. The concentration of the impurities at the interface between the barrier layer and the channel layer in the isolation region is lower than the concentration at the impurity concentration peak.

公开(公告)号：US20220392887A1

公开(公告)日：2022-12-08

申请号：US17770010

申请日：2020-10-29

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Manabu YANAGIHARA ,  Takahiro SATO ,  Hiroto YAMAGIWA ,  Masahiro HIKITA

IPC: H01L27/06 ,  H01L29/20 ,  H01L29/872 ,  H01L29/778

Abstract: The semiconductor device includes: a semiconductor substrate; a first transistor disposed above the semiconductor substrate and including a first source electrode, a first gate region, and a first drain electrode; and a second transistor disposed above the semiconductor substrate and including a second source electrode, a second gate region, and a second drain electrode. The first source electrode, the second gate region, and the second source electrode are substantially at an identical potential. The first drain electrode and the second drain electrode are substantially at an identical potential.

公开(公告)号：US20220190152A1

公开(公告)日：2022-06-16

申请号：US17688440

申请日：2022-03-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hideyuki OKITA ,  Masahiro HIKITA ,  Yasuhiro UEMOTO

IPC: H01L29/778 ,  H01L29/10 ,  H01L27/098 ,  H01L29/808 ,  H01L29/66

Abstract: A semiconductor device includes: a substrate; a channel layer constituted of a single nitride semiconductor on the substrate; a first barrier layer which is a nitride semiconductor on a part of an upper surface of the channel layer and having a band gap larger than that of the channel layer; a gate layer which is a nitride semiconductor on and in contact with the first barrier layer; a second barrier layer which is a nitride semiconductor in contact with the first barrier layer in an area where the gate layer is not disposed above the channel layer, and having a band gap larger than that of the channel layer and having a thickness or a band gap independent from the first barrier layer; a gate electrode on the gate layer; and a source electrode and a drain electrode spaced apart from the gate layer and on the second barrier layer.