公开(公告)号：US20210310152A1

公开(公告)日：2021-10-07

申请号：US17219970

申请日：2021-04-01

Applicant: Psiquantum, Corp.

Inventor： Yong Liang ,  John Elliott Ortmann, JR. ,  John Berg ,  Ann Melnichuk

IPC: C30B23/00 ,  C30B29/32 ,  G06T7/00 ,  C30B23/02

Abstract: A method of forming a film comprises growing, using a deposition system, at least a portion of the film and analyzing, using a RHEED instrument, the at least a portion of the film. Using a computer, data is acquired from the RHEED instrument that is indicative of a stoichiometry of the at least a portion of the film. Using the computer, adjustments to one or more process parameters of the deposition system are calculated to control stoichiometry of the film during subsequent deposition. Using the computer, instructions are transmitted to the deposition system to execute the adjustments of the one or more process parameters. Using the deposition system, the one or more process parameters are adjusted.