公开(公告)号：US11508463B2

公开(公告)日：2022-11-22

申请号：US16624833

申请日：2018-06-29

Applicant: PURDUE RESEARCH FOUNDATION

Inventor： Tillmann Kubis ,  James Charles

IPC: G16C10/00 ,  G16C20/30 ,  G06F30/28 ,  G06F17/18 ,  G06F113/08 ,  G06F111/10

Abstract: A method of determining at least one property of a liquid system using a modeling system, the liquid system including at least one molecule in a solvent, the modeling system including a processor, comprises generating a quantum model of the liquid system using the processor of the modeling system, the quantum model including a device region and a lead region, the device region being spherical, paraboloid, cubic or arbitrary in shape and encompassing the at least one molecule and a portion of the solvent of the liquid system, the lead region encompassing a region of the solvent surrounding the device region, determining a first property of the device region by solving a first quantum equation for the device region using the processor of the system, determining the first property of the lead region by solving the first quantum equation under open boundary conditions for the lead region using the processor of the system, and combining the first property of the device region with the first property of the lead region to arrive at a total first property for the liquid system using the processor of the system.

公开(公告)号：US20210334438A1

公开(公告)日：2021-10-28

申请号：US17369255

申请日：2021-07-07

Applicant: Purdue Research Foundation

Inventor： Gerhard Klimeck ,  Tillmann Kubis ,  Junzhe Geng

IPC: G06F30/20 ,  H01L33/00 ,  H01L33/06 ,  G06F30/367

Abstract: The disclosure develops a multi-scale model that partitions the device into different spatial regions where the high carrier domains are treated as reservoirs in local equilibrium and serve as injectors and receptors of carriers into the neighboring reservoirs through tunneling and thermionic emission. The nonequilibrium Green's function (NEGF) formalism is used to compute the dynamics (states) and the kinetics (filling of states) in the entire extended complex device. The local density of states in the whole device is computed quantum mechanically within a multi-band tight binding Hamiltonian. The model results agree with experimental I-V curves quantitatively.

公开(公告)号：US20210057606A1

公开(公告)日：2021-02-25

申请号：US16865205

申请日：2020-05-01

Applicant: Purdue Research Foundation

Inventor： Tillmann Kubis

IPC: H01L33/06 ,  H01L33/38 ,  H01L27/15 ,  H01L33/44

Abstract: A light emitting device includes a first light emitting diode (LED). The first LED includes a first metallic layer. The first LED additionally includes a p-doped semiconductor layer over the first metallic layer. Additionally, the first LED includes a multi quantum well (MQW) semiconductor layer over the p-doped semiconductor layer. Moreover, the first LED includes an n-doped semiconductor layer over the MQW semiconductor layer. Next, the first LED includes a second metallic layer over the n-doped semiconductor layer. The light emitting device also includes a second LED over the first LED. Further, the light emitting device includes a third LED over the second LED.