公开(公告)号：US10236886B2

公开(公告)日：2019-03-19

申请号：US15393180

申请日：2016-12-28

Applicant: QUALCOMM Incorporated

Inventor： Satyanarayana Sahu ,  Xiangdong Chen ,  Venugopal Boynapalli ,  Hyeokjin Lim ,  Mickael Malabry ,  Mukul Gupta

IPC: H01L23/528 ,  H03K19/0948 ,  H01L27/118 ,  H01L23/522 ,  H01L27/02 ,  H01L27/092

Abstract: A MOS device of an IC includes pMOS and nMOS transistors. The MOS device further includes a first Mx layer interconnect extending in a first direction and coupling the pMOS and nMOS transistor drains together, and a second Mx layer interconnect extending in the first direction and coupling the pMOS and nMOS transistor drains together. The first and second Mx layer interconnects are parallel. The MOS device further includes a first Mx+1 layer interconnect extending in a second direction orthogonal to the first direction. The first Mx+1 layer interconnect is coupled to the first Mx layer interconnect and the second Mx layer interconnect. The MOS device further includes a second Mx+1 layer interconnect extending in the second direction. The second Mx+1 layer interconnect is coupled to the first Mx layer interconnect and the second Mx layer interconnect. The second Mx+1 layer interconnect is parallel to the first Mx+1 layer interconnect.