公开(公告)号：US20210217697A1

公开(公告)日：2021-07-15

申请号：US16743350

申请日：2020-01-15

Applicant: QUALCOMM Incorporated

Inventor： Bharani CHAVA ,  Stanley Seungchul SONG

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/528 ,  H01L23/535

Abstract: Certain aspects of the present disclosure provide apparatus and techniques for fabricating a semiconductor device. A semiconductor device includes: an active device layer a local interconnect layer disposed above the active device layer; a dielectric layer disposed above the local interconnect layer; a metal layer disposed above the dielectric layer; and one or more metal sections disposed in the dielectric layer underneath one or more metal regions of the metal layer, wherein none of the one or more metal sections is electrically connected to a trace in the local interconnect layer.